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Dark Current Spectroscopy on Alpha Irradiated Pinned Photodiode CMOS Image Sensors

Belloir, Jean-Marc and Goiffon, Vincent and Virmontois, Cédric and Paillet, Philippe and Raine, Mélanie and Magnan, Pierre and Gilard, Olivier Dark Current Spectroscopy on Alpha Irradiated Pinned Photodiode CMOS Image Sensors. (2016) IEEE Transactions on Nuclear Science, 63 (4). 2183-2192. ISSN 0018-9499

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Official URL: http://dx.doi.org/10.1109/TNS.2016.2548562


Dark Current Spectroscopy is tested for the first time on irradiated CMOS Image sensors (CIS) to detect and identify radiation-induced silicon bulk defects. Two different pinned photodiode CIS are tested: a 5MP Commercial-Off-The-Shelf (COTS) CIS from OmniVision (OV5647) and a 256x256 pixel custom CIS. These CISs are irradiated with alpha particles at various fluences and at two different particle energies in the custom CIS (4 MeV or < 500 keV). Several defect types are detected in both CIS (up to five in the custom CIS). The identity of the defects is investigated by measuring the activation energy of the dark current and the stability of the defects during an isochronal annealing. Two defects are identified in the custom CIS: the divacancy and the vacancy-phosphorus. This work proves that dark current spectroscopy can be used on irradiated CIS to detect and identify radiation-induced silicon bulk defects.

Item Type:Article
Additional Information:Thanks to the IEEE (Institute of Electrical and Electronics Engineers). This paper is available at : http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=23“© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
HAL Id:hal-01450862
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE)
French research institutions > Centre National d'Études Spatiales - CNES (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Laboratory name:
Deposited On:31 Jan 2017 13:12

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