Goiffon, Vincent CMOS Image Sensors in Harsh Radiation Environments. (2016) In: TWEPP 2016 - Topical Workshop on Electronics for Particle Physics, 26 September 2016 - 30 September 2016 (Karlsruhe, Germany). (Unpublished)
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(Document in English)
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Abstract
CMOS Image Sensors (CIS) have become the main solid state image sensor technology for visible imaging applications. Despite the higher radiation hardness of CIS compared to its CCD counterpart, there are still demanding applications where CMOS imager performances can be significantly reduced by high energy particles. This is the case for the most severe radiation environments where imaging capabilities are required: particle physics, nuclear fusion, nuclear power plants…After a brief overview of the CIS technology and the review of basic degradation mechanisms in harsh radiation environments, mitigation techniques are discussed and recent developments are used as illustrative examples.
Item Type: | Invited Conference |
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Audience (conference): | International conference without published proceedings |
Uncontrolled Keywords: | CMOS Image Sensors - CIS - Active Pixel Sensors - APS - MAPS - CMOS - CMOS Integrated Circuits - Ionizing Radiation - Total Ionizing Dose - TID - Single Event Effect - SEE - Displacement Damage - ITER - Laser MegaJoule - LMJ - Inertial Confinment Fusion - Magnetic Confinement Fusion - Plasma Diagnostic - Neutron - Gamma-ray - X-ray - Protons - Heavy Ions - Enegertic Particle - Radiation Hardening - RHBD - Rad-Hard - Singlet Event Transient - Photodiode - Pinned Photodiode - Gated Diode - Dark Current - Radiation Effects - Remote Handling |
Institution: | Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE) |
Laboratory name: | |
Statistics: | download |
Deposited On: | 09 Jan 2017 11:59 |
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