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High Total Ionizing Dose and Temperature Effects on Micro- and Nano-Electronic Devices

Gaillardin, Marc and Martinez, Martial and Girard, Sylvain and Goiffon, Vincent and Paillet, Philippe and Leray, Jean-Luc and Magnan, Pierre and Ouerdane, Youcef and Boukenter, Aziz and Marcandella, Claude and Duhamel, Olivier and Raine, Mélanie and Richard, Nicolas and Andrieu, François and Barraud, Sylvain and Faynot, Olivier High Total Ionizing Dose and Temperature Effects on Micro- and Nano-Electronic Devices. (2015) IEEE Transactions on Nuclear Science, 62 (3). 1226-1232. ISSN 0018-9499

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Official URL: http://dx.doi.org/10.1109/TNS.2015.2416975


This paper investigates the vulnerability of several micro- and nano-electronic technologies to a mixed harsh environment involving high total ionizing dose at MGy levels and high temperature. Such operating conditions emerge today for several applications like new security systems in existing or future nuclear power plants, fusion experiments, or deep space missions. In this work, the competing effects of ionizing radiations and temperature are characterized in elementary devices made of MOS transistors from several technologies. First, devices are irradiated using a radiation laboratory X-ray source up to MGy dose levels at room temperature. Devices are either grounded or biased during irradiation to simulate two major circuit cases: a circuit which waits for a wake up signal, representing most of the lifetime of an integrated circuit operating in a harsh environment, and a nominal circuit function. Devices are then annealed at several temperatures to discuss the post-irradiation behavior and to determine whether an elevated temperature is an issue or not for circuit function in mixed harsh environments.

Item Type:Article
Additional Information:Thanks to IEEE Xplore editor. The definitive version is available at http://ieeexplore.ieee.org The original PDF of the article can be found at IEEE Transactions on Nuclear Science website : http://dx.doi.org/10.1109/TNS.2015.2416975
HAL Id:ujm-01185904
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE)
French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Other partners > Institut d'optique Graduate School - IOGS (FRANCE)
Other partners > Université Jean Monnet - St Etienne (FRANCE)
Laboratory name:
Deposited On:16 Dec 2015 10:51

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