Gaillardin, Marc and Goiffon, Vincent TID Effects in CMOS and SOI - HBD vs HBT – application to MGy Hardening of a CMOS Imager. (2015) In: Advancements in Nuclear Instrumentation Measurement Methods and their Applications (ANIMMA2015), 20 April 2015 - 24 April 2015 (Lisbon, Portugal). (Unpublished)
![[img]](https://oatao.univ-toulouse.fr/style/images/fileicons/application_pdf.png) |
(Document in English)
PDF (Author's version) - Depositor and staff only - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader 2MB |
Abstract
This presentation provides an overview of Total Ionizing Dose effects in CMOS bulk and SOI technologies. The particular case of hardening-by-design of a CMOS imager for the MGy range is used as a practical example to illustrates the presented degradation mechanisms.
| Item Type: | Conference or Workshop Item (Speech) |
|---|---|
| Audience (conference): | International conference without published proceedings |
| Uncontrolled Keywords: | |
| Institution: | French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE) Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE) |
| Laboratory name: | |
| Statistics: | download |
| Deposited By: | Vincent Goiffon |
| Deposited On: | 30 Aug 2016 09:10 |
Repository Staff Only: item control page
