Gaillardin, Marc and Goiffon, Vincent TID Effects in CMOS and SOI - HBD vs HBT – application to MGy Hardening of a CMOS Imager. (2015) In: Advancements in Nuclear Instrumentation Measurement Methods and their Applications (ANIMMA2015), 20 April 2015 - 24 April 2015 (Lisbon, Portugal). (Unpublished)
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Abstract
This presentation provides an overview of Total Ionizing Dose effects in CMOS bulk and SOI technologies. The particular case of hardening-by-design of a CMOS imager for the MGy range is used as a practical example to illustrates the presented degradation mechanisms.
| Item Type: | Conference or Workshop Item (Speech) |
|---|---|
| Audience (conference): | International conference without published proceedings |
| Uncontrolled Keywords: | |
| Institution: | French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE) Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE) |
| Laboratory name: | |
| Statistics: | download |
| Deposited On: | 30 Aug 2016 09:10 |
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