Investigation of the kinetics of the chemical vapor deposition of aluminum from dimethylethylamine alane: experiments and computations

Abstract

Experiments and computations are performed for the metalorganic chemical vapor deposition (MOCVD) of aluminum (Al) from dimethylethylamine alane (DMEAA). The deposition rate as a function of the substrate temperature and the evolution of the deposition rate along the radius of the susceptor are experimentally determined, in a vertical, warm wall MOCVD reactor operating at 10 Torr, in the temperature range 139 οC-240 οC. Following previously published mechanism for the decomposition of DMEAA, a predictive 3D model of the process is built, based on the mass, momentum, energy and species transport equations with the aim to simulate the process. Taking into account experimental results it is demonstrated that a volumetric and a surface reaction are responsible for the deposition of Al from DMEAA. For both reactions, first order Arrhenius kinetics are implemented and the kinetic parameters are determined through fitting to the experimental data. The results show satisfactory agreement between experiments and computations for almost the whole temperature range examined.