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Co-fired AlN–TiN assembly as a new substrate technology for high-temperature power electronics packaging

Valdez-Nava, Zarel and Guillemet-Fritsch, Sophie and Ferrato, Marc and Kozako, Masahiro and Lebey, Thierry Co-fired AlN–TiN assembly as a new substrate technology for high-temperature power electronics packaging. (2013) Ceramics International, 39 (8). 8743-8749. ISSN 0272-8842

(Document in English)

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Official URL: http://dx.doi.org/10.1016/j.ceramint.2013.04.060


New wide-band gap semiconductors (SC) for power electronics such as SiC, GaN and diamond will allow higher power densities, leading to higher operating temperatures. However, the surrounding materials will also undergo an increase in temperature, meaning that a parallel effort is needed in SC packaging technologies research. One of the essential components, the substrate, is used to insulate electrically the SC from the rest of the system, drain the generated heat and provide a path to connect the SC to the rest of the system. Direct bonded copper (DBC) and active metal-brazed (AMB) substrates have limited temperature and cycling operation, owing to the large differences in the thermal expansion coefficients between the ceramics and the metals. In this work we propose a new and original substrate technology based on two co-sintered ceramics: an insulating ceramic (AlN) and a conductive one (TIN). The microstructure, the chemical compatibility and the electrical properties indicate that the proposed substrate could operate at a temperature above 200 1C the current substrate technologies, which makes it particularly attractive for high-temperature power electronics applications.

Item Type:Article
Additional Information:Thanks to Elsevier editor. The definitive version is available at http://www.sciencedirect.com/science/article/pii/S0272884213004513
HAL Id:hal-01168751
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE)
Université de Toulouse > Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE)
Other partners > Kyushu University (JAPAN)
Université de Toulouse > Université Toulouse III - Paul Sabatier - UT3 (FRANCE)
Other partners > Boostec (FRANCE)
Laboratory name:
Deposited On:26 Jun 2015 12:52

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