Pelamatti, Alice and Belloir, Jean-Marc and Messien, Camille and Goiffon, Vincent and Estribeau, Magali and Magnan, Pierre and Virmontois, Cédric and Saint-Pé, Olivier and Philippe, Paillet Temperature dependence and dynamic behaviour of full well capacity in pinned photodiode CMOS image sensors. (2015) IEEE Transactions on Electron Devices, 62 (4). 1200-1207. ISSN 0018-9383
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(Document in English)
PDF (Author's version) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader 790kB |
Official URL: http://dx.doi.org/10.1109/TED.2015.2400136
Abstract
This study presents an analytical model of the Full Well Capacity(FWC) in Pinned Photodiode (PPD) CMOS image sensors. By introducing the temperature dependence of the PPD pinning voltage, the existing model is extended (with respect to previous works) to take into account the effect of temperature on the FWC. It is shown, with the support of experimental data, that whereas in dark conditions the FWC increases with temperature, a decrease is observed if FWC measurements are performed under illumination. This study also shows that after a light pulse, the charge stored in the PPD drops as the PPD tends toward equilibrium. On the base of these observations, an analytical model of the dynamic behaviour of the FWC in non-continuous illumination conditions is proposed. The model is able to reproduce experimental data over six orders of magnitude of time. Both the static and dynamic models can be useful tools to correctly interpret FWC changes following design variations and to accurately define the operating conditions during device characterizations.
Item Type: | Article |
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Additional Information: | Thanks to IEEE editor. The definitive version is available at http://ieeexplore.ieee.org/Xplore/home.jsp The original PDF of the article can be found at IEEE Transactions on Electron Devices website :http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7047723 |
HAL Id: | hal-01275212 |
Audience (journal): | International peer-reviewed journal |
Uncontrolled Keywords: | CMOS - Image - Sensor - CIS - Pinned - Photodiode - PPD - Pinning - Voltage - Full well capacity - FWC - Dynamic - Behaviour - Modeling - Analytical modeling - Temperature - Active pixel sensor - APS - Capacitance |
Institution: | Other partners > Airbus (FRANCE) French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE) French research institutions > Centre National d'Études Spatiales - CNES (FRANCE) Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE) |
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Deposited On: | 10 Dec 2015 15:20 |
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