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Development of an original model for the synthesis of silicon nanodots by Low Pressure Chemical Vapor Deposition

Cocheteau, Vanessa and Mur, Pierre and Billon, Thierry and Scheid, Emmanuel and Caussat, Brigitte Development of an original model for the synthesis of silicon nanodots by Low Pressure Chemical Vapor Deposition. (2008) Biochemical Engineering Journal, 140 (1-3). 600-608. ISSN 1385-8947

(Document in English)

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Official URL: http://dx.doi.org/10.1016/j.cej.2008.02.027


Using the Computational Fluid Dynamics code Fluent, a simulation model of an industrial Low Pressure Chemical Vapor Deposition reactor has been developed for the synthesis of silicon nanodots from silane SiH4 on silicon dioxide SiO2 substrates. A comparison between experimental and simulated deposition rates has shown that classical kinetic laws largely over-estimated these deposits. So, an original heterogeneous kinetic model is proposed as a first attempt to quantify the temporal evolution of deposition rates and of surface site numbers, as a function of operating conditions and of the chemical nature of substrate sites, for the early stages of silicon deposition. Contributions of silane and of the homogeneously born silylene SiH2 to nucleation and growth have been considered on different surface sites, silanol Si–OH, siloxane Si–O–Si and fresh silicon bonds. Simulations have revealed that for the conditions tested, the classical heterogeneous kinetic laws over-estimate, by more than 60%, silicon deposition during the first stages. The assumption that silylene and more largely all the unsaturated species formed in the gas phase contribute in priority to nucleation has been validated. Nucleation appears as a mandatory step to form the first fresh Si sites to allow deposition to occur from silane via growth phenomena.

Item Type:Article
Additional Information:Thanks to Elsevier editor. The definitive version is available at http://www.sciencedirect.com The original PDF of the article can be found at Chemical Enginneering journal website : http://www.sciencedirect.com/science/journal/13858947
HAL Id:hal-03580101
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:Université de Toulouse > Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE)
Université de Toulouse > Université Toulouse III - Paul Sabatier - UT3 (FRANCE)
French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE)
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Deposited On:21 Oct 2008 11:55

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