Goiffon, Vincent and Cervantes, Paola
and Virmontois, Cédric
and Corbière, Franck
and Magnan, Pierre
and Estribeau, Magali
Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes.
(2011)
In: 2011 IEEE Nuclear and Space Radiation Effects Conference (NSREC), 25 July 2011 - 29 July 2011 (Las Vegas, United States).
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(Document in English)
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Official URL: https://doi.org/10.1109/TNS.2011.2171502
Abstract
Selected radiation hardened photodiode layouts, manufactured in a deep submicron CMOS Image Sensor technology, are irradiated by 60Co gamma-rays up to 2.2 Mrad(SiO2) and studied in order to identify the most efficient structures and the guidelines (recess distance, bias voltage) to follow to make them work efficiently in such technology. To do so, both photodiode arrays and active pixel sensors are used. After 2.2 Mrad(SiO2), the studied sensors are fully functional and most of the radiation hardened photodiodes exhibit radiation induced dark current values more than one order of magnitude lower than the standard photodiode.
Item Type: | Conference or Workshop Item (Paper) |
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Audience (journal): | International peer-reviewed journal |
Audience (conference): | International conference proceedings |
Uncontrolled Keywords: | |
Institution: | Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE) |
Laboratory name: | Département d'Electronique, Optronique et Signal - DEOS (Toulouse, France) - Image Sensor Research Team |
Statistics: | download |
Deposited On: | 18 Sep 2014 14:43 |
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