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Ionization versus displacement damage effects in proton irradiated CMOS sensor manufactured in deep submicron process

Goiffon, Vincent and Magnan, Pierre and Saint-Pé, Olivier and Bernard, Frédéric and Rolland, Guy Ionization versus displacement damage effects in proton irradiated CMOS sensor manufactured in deep submicron process. (2009) In: 5th International Conference on New Developments In Photodetection (NDIP08), 15 June 2008 - 20 June 2008 (Aix-les-Bains, France).

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Official URL: https://doi.org/10.1016/j.nima.2009.05.078

Abstract

We present a study of proton irradiation effects on deep submicron CMOS image sensors. The ionization and displacement damage effects are discriminated and localized thanks to cobalt 60 irradiations and large photodiode current measurements.

Item Type:Conference or Workshop Item (Paper)
Audience (conference):International conference proceedings
Uncontrolled Keywords:
Institution:French research institutions > Centre National d'Études Spatiales - CNES (FRANCE)
Other partners > EADS - Astrium (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
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Deposited By: Vincent Goiffon
Deposited On:19 Sep 2014 14:33

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