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Radiation Effects in CMOS Isolation Oxides: Differences and Similarities With Thermal Oxides

Gaillardin, Marc and Goiffon, Vincent and Marcandella, Claude and Girard, Sylvain and Martinez, Martial and Paillet, Philippe and Magnan, Pierre and Estribeau, Magali Radiation Effects in CMOS Isolation Oxides: Differences and Similarities With Thermal Oxides. (2013) IEEE Transactions on Nuclear Science, 60 (4). 2623-2629. ISSN 0018-9499

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Official URL: http://dx.doi.org/10.1109/TNS.2013.2249094


Radiation effects in thick isolation oxides of modern CMOS technologies are investigated using dedicated test structures designed using two commercial foundries. Shallow Trench Isolation and Pre-Metal Dielectric are studied using electrical measurements performed after X-ray irradiations and isochronal annealing cycles. This paper shows that trapping properties of such isolation oxides can strongly differ from those of traditional thermal oxides usually used to process the gate oxide of Metal Oxide Semiconductor Field Effect Transistors. Buildup and annealing of both radiation-induced oxide-trap charge and radiation-induced interface traps are discussed as a function of the oxide type, foundry and bias condition during irradiation. Radiation-induced interface traps in such isolation oxides are shown to anneal below 100°C contrary to what is usually observed in thermal oxides. Implications for design hardening and radiation tests of CMOS Integrated Circuits are discussed.

Item Type:Article
Additional Information:Thanks to IEEE editor. (c) 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. The definitive version is available at http://ieeexplore.ieee.org
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE)
French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Other partners > Institut d'optique Graduate School - IOGS (FRANCE)
Other partners > Université Jean Monnet - St Etienne (FRANCE)
Laboratory name:
Deposited On:22 Nov 2013 09:51

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