Items where Person is "Goiffon, Vincent"

Article

Place, Sébastien and Carrere, Jean-Pierre and Allegret, Stephane and Magnan, Pierre and Goiffon, Vincent and Roy, François Rad Tolerant CMOS Image Sensor Based on Hole Collection 4T Pixel Pinned Photodiode. (2012) IEEE Transactions on Nuclear Science, vol. 59 (n° 6). pp. 2888-2893. ISSN 0018-9499

Goiffon, Vincent and Girard, Sylvain and Paillet, Philippe and Magnan, Pierre and Chabane, A. and Rousseau, A. and Darbon, S. and Cervantes, Paola and Bourgade, J.-L. Mitigation technique for use of CMOS image sensors in megajoule class laser radiative environment. (2012) IEEE Electronics Letters , vol. 48 (n° 21). pp. 1338-1339. ISSN 0013-5194

Place, Sébastien and Carrere, Jean-Pierre and Allegret, Stephane and Magnan, Pierre and Goiffon, Vincent and Roy, François Radiation Effects on CMOS Image Sensors With Sub-2 µm Pinned Photodiodes. (2012) IEEE Transactions on Nuclear Science, vol. 59 (n° 4). pp. 909-917. ISSN 0018-9499

Virmontois, Cédric and Goiffon, Vincent and Corbière, Franck and Magnan, Pierre and Girard, Sylvain and Bardoux, Alain Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors. (2012) IEEE Transactions on Nuclear Science, vol. 59 (n° 6). pp. 2872-2877. ISSN 0018-9499

Goiffon, Vincent and Virmontois, Cédric and Magnan, Pierre and Cervantes, Paola and Place, Sébastien and Gaillardin, Marc and Girard, Sylvain and Paillet, Philippe and Estribeau, Magali and Martin-Gonthier, Philippe Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors. (2012) IEEE Transactions on Nuclear Science, 59 (4). pp. 918-926. ISSN 0018-9499

Martin-Gonthier, Philippe and Goiffon, Vincent and Magnan, Pierre In-Pixel source follower transistor RTS noise behavior under ionizing radiation in CMOS image sensors. (2012) IEEE Transactions on Electron Devices, vol. 59 (n° 6). pp. 1686-1692. ISSN 0018-9383

Goiffon, Vincent and Estribeau, Magali and Marcelot, Olivier and Cervantes, Paola and Magnan, Pierre and Gaillardin, Marc and Virmontois, Cédric and Martin-Gonthier, Philippe and Molina, Romain and Corbière, Franck and Girard, Sylvain and Paillet, Philippe and Marcandella, Claude Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose. (2012) IEEE Transactions on Nuclear Science, vol. 59 (n° 6). pp. 2878-2887. ISSN 0018-9499

Virmontois, Cédric and Goiffon, Vincent and Magnan, Pierre and Girard, Sylvain and Saint-Pé, Olivier and Petit, Sophie and Rolland, Guy and Bardoux, Alain Similarities Between Proton and Neutron Induced Dark Current Distribution in CMOS Image Sensors. (2012) IEEE Transactions on Nuclear Science, vol. 59 (n° 4). pp. 927-936. ISSN 0018-9499

Goiffon, Vincent and Girard, Sylvain and Magnan, Pierre and Chabane, A. and Paillet, Philippe and Cervantes, Paola and Martin-Gonthier, Philippe and Baggio, Jacques and Estribeau, Magali and Bourgade, J.-L. and Darbon, S. and Rousseau, A. and Glebov, V. Yu. and Pien, G. and Sangster, T. C. Vulnerability of CMOS image sensors in megajoule class laser harsh environment. (2012) Optics Express, vol. 20 (n° 18). pp. 20028-20042. ISSN 1094-4087

Goiffon, Vincent and Cervantes, Paola and Virmontois, Cédric and Corbière, Franck and Magnan, Pierre and Estribeau, Magali Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes. (2011) IEEE Transaction on Nuclear Sciences (n° 99). ISSN 0018-9499

Gaillardin, Marc and Goiffon, Vincent and Girard, Sylvain and Martinez, Martial and Magnan, Pierre and Paillet, Philippe Enhanced Radiation-Induced Narrow Channel Effects in Commercial 0.18 μm Bulk Technology. (2011) IEEE Transactions on Nuclear Science, Vol. 58 (p. 6). pp. 2807-2815. ISSN 0018-9499

Goiffon, Vincent and Magnan, Pierre and Martin-Gonthier, Philippe and Virmontois, Cédric and Gaillardin, Marc Evidence of a novel source of random telegraph signal in CMOS image sensors. (2011) IEEE Electron Device Letters, vol. 32 (n° 6). pp. 773-775. ISSN 0741-3106

Virmontois, Cédric and Goiffon, Vincent and Magnan, Pierre and Saint-Pé, Olivier and Girard, Sylvain and Petit, Sophie and Rolland, Guy and Bardoux, Alain Total ionizing dose versus displacement damage dose induced dark current random telegraph signals in CMOS image sensors. (2011) IEEE Transactions on Nuclear Science, vol. 58 (n° 6). pp. 3085-3094. ISSN 0018-9499

Goiffon, Vincent and Virmontois, Cédric and Magnan, Pierre and Girard, Sylvain and Paillet, Philippe Analysis of total dose-induced dark current in CMOS image sensors from interface state and trapped charge density measurements. (2010) IEEE Transactions on Nuclear Science, vol. 57 (n° 6). pp. 3087-3094. ISSN 0018-9499

Virmontois, Cédric and Goiffon, Vincent and Magnan, Pierre and Girard, Sylvain and Inguimbert, Christophe and Petit, Sophie and Rolland, Guy and Saint-Pé, Olivier Displacement damage effects due to neutron and proton irradiations on CMOS image sensors manufactured in deep submicron technology. (2010) IEEE Transactions on Nuclear Science, vol. 57 (n° 6). pp. 3101-3108. ISSN 0018-9499

Goiffon, Vincent and Estribeau, Magali and Magnan, Pierre Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology. (2009) IEEE Transactions on Electron Devices, vol. 5 (n° 11). pp. 2594 -2601. ISSN 0018-9383

Goiffon, Vincent and Hopkinson, Gordon R. and Magnan, Pierre and Bernard, Frédéric and Rolland, Guy and Saint-Pé, Olivier Multilevel RTS in proton irradiated CMOS image sensors manufactured in a deep submicron technology. (2009) IEEE Transactions on Nuclear Science, vol. 5 (n° 4). pp. 2132-2141 . ISSN 0018-9499

Goiffon, Vincent and Magnan, Pierre and Saint-Pé, Olivier and Bernard, Frédéric and Rolland, Guy Ionization versus displacement damage effects in proton irradiated CMOS sensors manufactured in deep submicron process. (2009) Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, vol. 610 (n° 1). pp. 225-229. ISSN 0168-9002

Goiffon, Vincent and Magnan, Pierre and Saint-Pé, Olivier and Bernard, Frédéric and Rolland, Guy Total dose evaluation of deep submicron CMOS imaging technology through elementary device and pixel array behavior analysis. (2008) IEEE Transactions on Nuclear Science, vol. 5 (n° 6). pp. 3494-3501. ISSN 0018-9499

Hopkinson, Gordon R. and Goiffon, Vincent and Mohammadzadeh, Ali Random telegraph signals in proton irradiated CCDs and APS. (2008) IEEE Transactions on Nuclear Science, vol. (n° 4). pp. 2197-2204. ISSN 0018-9499

Conference or Workshop Item

Goiffon, Vincent and Magnan, Pierre and Martin-Gonthier, Philippe and Virmontois, Cédric and Gaillardin, Marc New source of random telegraph signal in CMOS image sensors. (2012) In: International Image Sensor Workshop, 08-11 June 2011, Hakodate-Onuma Prince Hotel, Hokaido, Japan.

Girard, Sylvain and Mescia, L. and Vivona, M. and Laurent, A. and Ouerdane, Y. and Marcandella, C. and Prudenzano, F. and Boukenter, A. and Robin, T. and Paillet, P. and Goiffon, Vincent and Cadier, B. and Cannas, M. and Boscaino, R. Coupled experiment/simulation approach for the design of radiation-hardened rare-earth doped optical fibers and amplifiers. (2011) In: 12th European Conference Radiation and Its Effects on Components and Systems (RADECS), 19-23 Sept 2011, Sevilla, Spain.

Goiffon, Vincent and Virmontois, Cédric and Magnan, Pierre and Cervantes, Paola and Gaillardin, Marc and Girard, Sylvain and Paillet, Philippe and Martin-Gonthier, Philippe Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors. (2011) In: Radiation Effects on Components and Systems Conference, 19-23 Sept. 2011, Sevilla, Spain.

Goiffon, Vincent and Virmontois, Cédric and Magnan, Pierre Investigation of dark current random telegraph signal in pinned photodiode CMOS image sensors. (2011) In: IEEE International Electron Devices Meeting (IEDM 2011), 05-07 Dec 2011, Washington, USA.

Place, Sébastien and Carrere, Jean-Pierre and Magnan, Pierre and Goiffon, Vincent and Roy, François Radiation effects on CMOS image sensors with sub-2µm pinned photodiodes. (2011) In: 12th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2011, 19-23 Sept 2011, Sevilla, Spain.

Goiffon, Vincent and Virmontois, Cédric and Magnan, Pierre and Cervantes, Paola and Corbière, Franck and Estribeau, Magali and Pinel, Philippe Radiation damages in CMOS image sensors: testing and hardening challenges brought by deep sub-micrometer CIS processes. (2010) In: SPIE Remote Sensing, 20 - 23 Sept 2010, Toulouse, France.

Virmontois, Cédric and Djité, Ibrahima and Goiffon, Vincent and Estribeau, Magali and Magnan, Pierre Proton and g-ray irradiation on deep sub-micron processed CMOS image sensor. (2009) In: International symposium on reliability of optoelectronics for space (ISROS 2009), 11-15 May 2009, Cagliari, Italy.

Goiffon, Vincent and Estribeau, Magali and Magnan, Pierre Optoelectrical performance evolution of CMOS image sensors exposed to gamma radiation. (2009) In: International Image Sensor Workshop, 25-28 June 2009, Bergen, Norway.

Goiffon, Vincent and Magnan, Pierre and Bernard, Frédéric and Rolland, Guy and Saint-Pé, Olivier and Huger, Nicolas and Corbière, Franck Ionizing radiation effects on CMOS imagers manufactured in deep submicron process. (2008) In: SPIE Electronic Imaging 2008 : Sensors, Cameras, and Systems for Industrial/Scientific Applications IX, 27-31 Jan 2008, San Jose, United States.

Virmontois, Cédric and Goiffon, Vincent and Magnan, Pierre and Girard, Sylvain and Saint-Pé, Olivier and Petit, Sophie and Rolland, Guy and Bardoux, Alain Influence of displacement damage dose on dark current distributions of irradiated CMOS image sensors. In: Radiation Effects on Components and Systems Conference, 19-23 Sept. 2011, Sevilla, Spain.