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Items where Person is "Goiffon, Vincent"

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Goiffon, Vincent and Estribeau, Magali and Michelot, Julien and Cervantes, Paola and Pelamatti, Alice and Marcelot, Olivier and Magnan, Pierre Pixel Level Characterization of Pinned Photodiode and Transfer Gate Physical Parameters in CMOS Image Sensors. (2014) IEEE Journal of the Electron Devices Society, vol. 2 (n° 4). pp. 65-76. ISSN 2168-6734

Marcelot, Olivier and Estribeau, Magali and Goiffon, Vincent and Martin-Gonthier, Philippe and Corbière, Franck and Molina, Romain and Rolando, Sébastien and Magnan, Pierre Study of CCD Transport on CMOS Imaging Technology: Comparison Between SCCD and BCCD, and Ramp Effect on the CTI. (2014) IEEE Transactions on Electron Devices, vol. 61 (n° 3). pp. 844-849. ISSN 0018-9383

Virmontois, Cédric and Goiffon, Vincent and Robbins, Mark S. and Tauziède, Laurie and Geoffray, Hervé and Raine, Mélanie and Girard, Sylvain and Gilard, Olivier and Magnan, Pierre and Bardoux, Alain Dark Current Random Telegraph Signals in Solid-State Image Sensors. (2013) IEEE Transactions on Nuclear Science, vol. 60 (n° 6). pp. 4323-4331. ISSN 0018-9499

Raine, Mélanie and Goiffon, Vincent and Girard, Sylvain and Rousseau, Adrien and Gaillardin, Marc and Paillet, Philippe and Duhamel, Olivier and Virmontois, Cédric Modeling Approach for the Prediction of Transient and Permanent Degradations of Image Sensors in Complex Radiation Environments. (2013) IEEE Transactions on Nuclear Science, vol. 60 (n° 6). pp. 4297-4304. ISSN 0018-9499

Lalucaa, Valerian and Goiffon, Vincent and Magnan, Pierre and Virmontois, Cédric and Rolland, Guy and Petit, Sophie Single Event Effects in 4T Pinned Photodiode Image Sensors. (2013) IEEE Transactions on Nuclear Science, vol. 60 (n° 6). pp. 4314 -4322. ISSN 0018-9499

Gaillardin, Marc and Girard, Sylvain and Paillet, Philippe and Leray, Jean-Luc and Goiffon, Vincent and Magnan, Pierre and Marcandella, Claude and Martinez, Martial and Raine, Mélanie and Duhamel, Olivier and Richard, Nicolas and Andrieu, F. and Barraud, S. and Faynot, O. Investigations on the vulnerability of advanced CMOS technologies to MGy dose environments. (2013) IEEE Transactions on Nuclear Science, 60 (4). pp. 2590-2597. ISSN 0018-9499

Gaillardin, Marc and Goiffon, Vincent and Marcandella, Claude and Girard, Sylvain and Martinez, Martial and Paillet, Philippe and Magnan, Pierre and Estribeau, Magali Radiation Effects in CMOS Isolation Oxides: Differences and Similarities With Thermal Oxides. (2013) IEEE Transactions on Nuclear Science, vol. 60 (n° 4). pp. 2623-2629. ISSN 0018-9499

Pelamatti, Alice and Goiffon, Vincent and Estribeau, Magali and Cervantes, Paola and Magnan, Pierre Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors. (2013) IEEE Electron Device Letters, vol. 34 (n° 7). pp. 900-902. ISSN 0741-3106

Lalucaa, Valerian and Goiffon, Vincent and Magnan, Pierre and Rolland, Guy and Petit, Sophie Single Event Effects in CMOS Image Sensors. (2013) IEEE Transactions on Nuclear Science, vol. 60 (n° 4). pp. 2494-2502. ISSN 0018-9499

Girard, Sylvain and Mescia, L. and Vivona, M. and Laurent, A. and Ouerdane, Y. and Marcandella, C. and Prudenzano, F. and Boukenter, A. and Robin, T. and Paillet, P. and Goiffon, Vincent and Gaillardin, Marc and Cadier, B. and Pinsard, E. and Cannas, M. and Boscaino, R. Design of Radiation-Hardened Rare-Earth Doped Amplifiers Through a Coupled Experiment/Simulation Approach. (2013) Journal of Lightwave Technology (JLT), vol. 31 (n° 8). pp. 1247-1254. ISSN 0733-8724

Paillet, Philippe and Goiffon, Vincent and Chabane, Aziouz and Girard, Sylvain and Rousseau, Adrien and Darbon, Stéphane and Duhamel, Olivier and Raine, Mélanie and Cervantes, Paola and Gaillardin, Marc and Bourgade, Jean-Luc and Magnan, Pierre and Glebov, Vladimir Yu and Pien, Gregory Hardening approach to use CMOS image sensors for fusion by inertial confinement diagnostics. (2013) IEEE Transactions on Nuclear Science, vol. 60 (n° 6). pp. 4349-4355. ISSN 0018-9499

Rolando, Sébastien and Goiffon, Vincent and Magnan, Pierre and Corbière, Franck and Molina, Romain and Tulet, Michel and Bréart-de-Boisanger, Michel and Saint-Pé, Olivier and Guiry, Saïprasad and Larnaudie, Franck and Leone, Bruno and Perez-Cuevas, Leticia and Zayer, Igor Smart CMOS image sensor for lightning detection and imaging. (2013) Applied Optics, vol. 52 (n° 7). pp. C16-C23. ISSN 0003-6935

Place, Sébastien and Carrere, Jean-Pierre and Allegret, Stephane and Magnan, Pierre and Goiffon, Vincent and Roy, François Rad Tolerant CMOS Image Sensor Based on Hole Collection 4T Pixel Pinned Photodiode. (2012) IEEE Transactions on Nuclear Science, vol. 59 (n° 6). pp. 2888-2893. ISSN 0018-9499

Goiffon, Vincent and Girard, Sylvain and Paillet, Philippe and Magnan, Pierre and Chabane, Aziouz and Rousseau, Adrien and Darbon, Stéphane and Cervantes, Paola and Bourgade, Jean-Luc Mitigation technique for use of CMOS image sensors in megajoule class laser radiative environment. (2012) IEEE Electronics Letters , vol. 48 (n° 21). pp. 1338-1339. ISSN 0013-5194

Place, Sébastien and Carrere, Jean-Pierre and Allegret, Stephane and Magnan, Pierre and Goiffon, Vincent and Roy, François Radiation Effects on CMOS Image Sensors With Sub-2 µm Pinned Photodiodes. (2012) IEEE Transactions on Nuclear Science, vol. 59 (n° 4). pp. 909-917. ISSN 0018-9499

Virmontois, Cédric and Goiffon, Vincent and Corbière, Franck and Magnan, Pierre and Girard, Sylvain and Bardoux, Alain Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors. (2012) IEEE Transactions on Nuclear Science, vol. 59 (n° 6). pp. 2872-2877. ISSN 0018-9499

Goiffon, Vincent and Virmontois, Cédric and Magnan, Pierre and Cervantes, Paola and Place, Sébastien and Gaillardin, Marc and Girard, Sylvain and Paillet, Philippe and Estribeau, Magali and Martin-Gonthier, Philippe Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors. (2012) IEEE Transactions on Nuclear Science, 59 (4). pp. 918-926. ISSN 0018-9499

Martin-Gonthier, Philippe and Goiffon, Vincent and Magnan, Pierre In-Pixel source follower transistor RTS noise behavior under ionizing radiation in CMOS image sensors. (2012) IEEE Transactions on Electron Devices, vol. 59 (n° 6). pp. 1686-1692. ISSN 0018-9383

Goiffon, Vincent and Estribeau, Magali and Marcelot, Olivier and Cervantes, Paola and Magnan, Pierre and Gaillardin, Marc and Virmontois, Cédric and Martin-Gonthier, Philippe and Molina, Romain and Corbière, Franck and Girard, Sylvain and Paillet, Philippe and Marcandella, Claude Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose. (2012) IEEE Transactions on Nuclear Science, vol. 59 (n° 6). pp. 2878-2887. ISSN 0018-9499

Virmontois, Cédric and Goiffon, Vincent and Magnan, Pierre and Girard, Sylvain and Saint-Pé, Olivier and Petit, Sophie and Rolland, Guy and Bardoux, Alain Similarities Between Proton and Neutron Induced Dark Current Distribution in CMOS Image Sensors. (2012) IEEE Transactions on Nuclear Science, vol. 59 (n° 4). pp. 927-936. ISSN 0018-9499

Goiffon, Vincent and Girard, Sylvain and Magnan, Pierre and Chabane, Aziouz and Paillet, Philippe and Cervantes, Paola and Martin-Gonthier, Philippe and Baggio, Jacques and Estribeau, Magali and Bourgade, Jean-Luc and Darbon, Stéphane and Rousseau, Adrien and Glebov, Vladimir Yu and Pien, Gregory and Sangster, Thomas C. Vulnerability of CMOS image sensors in megajoule class laser harsh environment. (2012) Optics Express, vol. 20 (n° 18). pp. 20028-20042. ISSN 1094-4087

Goiffon, Vincent and Cervantes, Paola and Virmontois, Cédric and Corbière, Franck and Magnan, Pierre and Estribeau, Magali Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes. (2011) IEEE Transaction on Nuclear Sciences (n° 99). ISSN 0018-9499

Gaillardin, Marc and Goiffon, Vincent and Girard, Sylvain and Martinez, Martial and Magnan, Pierre and Paillet, Philippe Enhanced Radiation-Induced Narrow Channel Effects in Commercial 0.18 μm Bulk Technology. (2011) IEEE Transactions on Nuclear Science, Vol. 58 (p. 6). pp. 2807-2815. ISSN 0018-9499

Goiffon, Vincent and Magnan, Pierre and Martin-Gonthier, Philippe and Virmontois, Cédric and Gaillardin, Marc Evidence of a novel source of random telegraph signal in CMOS image sensors. (2011) IEEE Electron Device Letters, vol. 32 (n° 6). pp. 773-775. ISSN 0741-3106

Virmontois, Cédric and Goiffon, Vincent and Magnan, Pierre and Saint-Pé, Olivier and Girard, Sylvain and Petit, Sophie and Rolland, Guy and Bardoux, Alain Total ionizing dose versus displacement damage dose induced dark current random telegraph signals in CMOS image sensors. (2011) IEEE Transactions on Nuclear Science, vol. 58 (n° 6). pp. 3085-3094. ISSN 0018-9499

Goiffon, Vincent and Virmontois, Cédric and Magnan, Pierre and Girard, Sylvain and Paillet, Philippe Analysis of total dose-induced dark current in CMOS image sensors from interface state and trapped charge density measurements. (2010) IEEE Transactions on Nuclear Science, vol. 57 (n° 6). pp. 3087-3094. ISSN 0018-9499

Virmontois, Cédric and Goiffon, Vincent and Magnan, Pierre and Girard, Sylvain and Inguimbert, Christophe and Petit, Sophie and Rolland, Guy and Saint-Pé, Olivier Displacement damage effects due to neutron and proton irradiations on CMOS image sensors manufactured in deep submicron technology. (2010) IEEE Transactions on Nuclear Science, vol. 57 (n° 6). pp. 3101-3108. ISSN 0018-9499

Goiffon, Vincent and Estribeau, Magali and Magnan, Pierre Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology. (2009) IEEE Transactions on Electron Devices, vol. 5 (n° 11). pp. 2594 -2601. ISSN 0018-9383

Goiffon, Vincent and Hopkinson, Gordon R. and Magnan, Pierre and Bernard, Frédéric and Rolland, Guy and Saint-Pé, Olivier Multilevel RTS in proton irradiated CMOS image sensors manufactured in a deep submicron technology. (2009) IEEE Transactions on Nuclear Science, vol. 5 (n° 4). pp. 2132-2141 . ISSN 0018-9499

Goiffon, Vincent and Magnan, Pierre and Saint-Pé, Olivier and Bernard, Frédéric and Rolland, Guy Ionization versus displacement damage effects in proton irradiated CMOS sensors manufactured in deep submicron process. (2009) Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, vol. 610 (n° 1). pp. 225-229. ISSN 0168-9002

Goiffon, Vincent and Magnan, Pierre and Saint-Pé, Olivier and Bernard, Frédéric and Rolland, Guy Total dose evaluation of deep submicron CMOS imaging technology through elementary device and pixel array behavior analysis. (2008) IEEE Transactions on Nuclear Science, vol. 5 (n° 6). pp. 3494-3501. ISSN 0018-9499

Hopkinson, Gordon R. and Goiffon, Vincent and Mohammadzadeh, Ali Random telegraph signals in proton irradiated CCDs and APS. (2008) IEEE Transactions on Nuclear Science, vol. (n° 4). pp. 2197-2204. ISSN 0018-9499

Conference or Workshop Item

Goiffon, Vincent and Michelot, Julien and Magnan, Pierre and Estribeau, Magali and Marcelot, Olivier and Cervantes, Paola and Pelamatti, Alice and Martin-Gonthier, Philippe On The Pixel Level Estimation of Pinning Voltage, Pinned Photodiode Capacitance and Transfer Gate Channel Potential. (2013) In: International Image Sensor Workshop (IISW 2013), 12 June 2013 - 16 June 2013 (Snowbird Resort, Utah, United States).

Rousseau, Adrien and Darbon, Stéphane and Paillet, Philippe and Girard, Sylvain and Bourgade, Jean-Luc and Raine, Mélanie and Duhamel, Olivier and Goiffon, Vincent and Magnan, Pierre and Chabane, Aziouz and Cervantes, Paola and Hamel, Matthieu and Larour, Jean Nuclear background effects on plasma diagnostics for megajoule class laser facility. (2013) In: SPIE Optics+Photonics, 25 August 2013 - 29 August 2013 (San Diego, California, United States).

Lalucaa, Valerian and Goiffon, Vincent and Magnan, Pierre and Virmontois, Cédric and Rolland, Guy and Petit, Sophie Single Event Effects in 4T Pinned Photodiode Image Sensors. (2013) In: 50th IEEE Nuclear and Space Radiation Effects Conference (NSREC), 8 July 2013 - 12 July 2013 (San Francisco, United States).

Goiffon, Vincent and Estribeau, Magali and Marcelot, Olivier and Cervantes, Paola and Magnan, Pierre and Gaillardin, Marc and Virmontois, Cédric and Martin-Gonthier, Philippe and Molina, Romain and Corbière, Franck and Girard, Sylvain and Paillet, Philippe and Marcandella, Claude Radiation Effects on Pinned Photodiode CMOS Image Sensors: Overview of Pixel Performance Degradation Due to Total Ionizing Dose. (2012) In: Workshop on Radiation Effects in Optoelectronic Detectors, 28 November 2012 - 29 November 2012 (Toulouse, France). (Unpublished)

Rolando, Sébastien and Goiffon, Vincent and Magnan, Pierre and Tulet, Michel and Bréart-de-Boisanger, Michel and Saint-Pé, Olivier and Guiry, Saïprasad and Corbière, Franck and Molina, Romain and Larnaudie, Franck and Leone, Bruno and Perez-Cuevas, Leticia and Zayer, Igor CMOS Image Sensor with on-chip Intelligence for Lightning Detection and Imaging. (2012) In: Imaging Systems and Applications (IS), 24 June 2012 - 28 June 2012 (Monterey, United States).

Rousseau, Adrien and Darbon, Stéphane and Girard, Sylvain and Paillet, Philippe and Bourgade, Jean-Luc and Goiffon, Vincent and Magnan, Pierre and Lalucaa, Valerian and Hamel, Matthieu and Larour, Jean Vulnerability of optical detection systems to megajoule class laser radiative environment. (2012) In: SPIE Photonics Europe, 16 April 2012 - 19 April 2012 (Brussels, Belgium).

Goiffon, Vincent and Cervantes, Paola and Virmontois, Cédric and Corbière, Franck and Magnan, Pierre and Estribeau, Magali Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes. (2011) In: IEEE Nuclear and Space Radiation Effects Conference (NSREC), 25 July 2011 - 29 July 2011 (Las Vegas, United States). (Unpublished)

Girard, Sylvain and Mescia, L. and Vivona, M. and Laurent, A. and Ouerdane, Y. and Marcandella, C. and Prudenzano, F. and Boukenter, A. and Robin, T. and Paillet, P. and Goiffon, Vincent and Cadier, B. and Cannas, M. and Boscaino, R. Coupled experiment/simulation approach for the design of radiation-hardened rare-earth doped optical fibers and amplifiers. (2011) In: 12th European Conference Radiation and Its Effects on Components and Systems (RADECS), 19-23 Sept 2011, Sevilla, Spain .

Goiffon, Vincent and Virmontois, Cédric and Magnan, Pierre and Cervantes, Paola and Gaillardin, Marc and Girard, Sylvain and Paillet, Philippe and Martin-Gonthier, Philippe Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors. (2011) In: Radiation Effects on Components and Systems Conference, 19-23 Sept. 2011, Sevilla, Spain .

Virmontois, Cédric and Goiffon, Vincent and Magnan, Pierre and Girard, Sylvain and Saint-Pé, Olivier and Petit, Sophie and Rolland, Guy Influence of Displacement Damage Dose on Dark Current Distribution of Irradiated CMOS Image Sensors. (2011) In: 12th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2011), 19 September 2011 - 23 September 2011 (Sevilla, Spain).

Goiffon, Vincent and Virmontois, Cédric and Magnan, Pierre Investigation of dark current random telegraph signal in pinned photodiode CMOS image sensors. (2011) In: IEEE International Electron Devices Meeting (IEDM 2011), 05-07 Dec 2011, Washington, USA .

Goiffon, Vincent and Magnan, Pierre and Virmontois, Cédric and Cervantes, Paola and Corbière, Franck and Estribeau, Magali Radiation Damages in CMOS Active Pixel Sensors. (2011) In: OSA Imaging Systems and Applications, 10 July 2011 - 14 July 2011 (Toronto, Canada).

Place, Sébastien and Carrere, Jean-Pierre and Magnan, Pierre and Goiffon, Vincent and Roy, François Radiation effects on CMOS image sensors with sub-2µm pinned photodiodes. (2011) In: 12th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2011, 19-23 Sept 2011, Sevilla, Spain .

Goiffon, Vincent and Virmontois, Cédric and Magnan, Pierre and Girard, Sylvain and Paillet, Philippe Analysis of Total Dose Induced Dark Current in CMOS Image Sensors from Interface State and Trapped Charge Density Measurements. (2010) In: IEEE Nuclear and Space Radiation Effects Conference (NSREC 2010), 19 July 2010 - 23 July 2010 (Denver, United States). (Unpublished)

Virmontois, Cédric and Goiffon, Vincent and Magnan, Pierre and Girard, Sylvain and Inguimbert, Christophe and Petit, Sophie and Rolland, Guy and Saint-Pé, Olivier Displacement Damage Effect Due to Neutron and Proton Irradiations on CMOS Image Sensors Manufactured in Deep Sub-Micron Technology. (2010) In: Nuclear and Space Radiation Effects Conference (NSREC), 19 July 2010 - 23 July 2010 (Denver, United States). (Unpublished)

Magnan, Pierre and Goiffon, Vincent Ionization Effects in CMOS Imagers. (2010) In: Fraunhofer IMS Workshop on CMOS Imaging, 4 May 2010 - 5 May 2010 (Duisburg, Germany). (Unpublished)

Goiffon, Vincent and Virmontois, Cédric and Magnan, Pierre and Cervantes, Paola and Corbière, Franck and Estribeau, Magali and Pinel, Philippe Radiation damages in CMOS image sensors: testing and hardening challenges brought by deep sub-micrometer CIS processes. (2010) In: SPIE Remote Sensing, 20 - 23 Sept 2010, Toulouse, France .

Virmontois, Cédric and Djité, Ibrahima and Goiffon, Vincent and Estribeau, Magali and Magnan, Pierre Proton and g-ray irradiation on deep sub-micron processed CMOS image sensor. (2009) In: International symposium on reliability of optoelectronics for space (ISROS 2009), 11-15 May 2009, Cagliari, Italy .

Goiffon, Vincent and Estribeau, Magali and Magnan, Pierre Optoelectrical performance evolution of CMOS image sensors exposed to gamma radiation. (2009) In: International Image Sensor Workshop, 25-28 June 2009, Bergen, Norway .

Goiffon, Vincent and Hopkinson, Gordon R. and Magnan, Pierre and Bernard, Frédéric and Rolland, Guy and Saint-Pé, Olivier Multi level RTS in proton irradiated CMOS image sensors manufactured in deep submicron technology. (2008) In: Radiation Effects on Components and Systems - RADECS, 10 September 2008 - 12 September 2008 (Jyväskylä, Finland). (Unpublished)

Goiffon, Vincent and Magnan, Pierre and Bernard, Frédéric and Rolland, Guy and Saint-Pé, Olivier and Huger, Nicolas and Corbière, Franck Ionizing radiation effects on CMOS imagers manufactured in deep submicron process. (2008) In: SPIE Electronic Imaging 2008 : Sensors, Cameras, and Systems for Industrial/Scientific Applications IX, 27-31 Jan 2008, San Jose, United States .

Goiffon, Vincent and Magnan, Pierre and Saint-Pé, Olivier and Bernard, Frédéric and Rolland, Guy Ionization versus displacement damage effects in proton irradiated CMOS sensor manufactured in deep submicron process. (2008) In: New Developments In Photodetection (NDIP), 15 June 2008 - 20 June 2008 (Aix-les-Bains, France). (Unpublished)

Goiffon, Vincent and Magnan, Pierre and Saint-Pé, Olivier and Bernard, Frédéric and Rolland, Guy Total Dose Evaluation of Deep Submicron CMOS Imaging Technology Through Elementary Device and Pixel Array Behavior Analysis. (2008) In: Nuclear and Space Radiation Effects Conference (NSREC), 14 July 2008 - 18 July 2008 (Tucson, United States). (Unpublished)

Virmontois, Cédric and Goiffon, Vincent and Magnan, Pierre and Girard, Sylvain and Saint-Pé, Olivier and Petit, Sophie and Rolland, Guy and Bardoux, Alain Influence of displacement damage dose on dark current distributions of irradiated CMOS image sensors. In: Radiation Effects on Components and Systems Conference, 19-23 Sept. 2011, Sevilla, Spain .

This list was generated on Fri Nov 28 14:58:16 2014 CET.