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Items where Laboratory is "Direction des applications militaires - CEA/DAM (Arpajon, France)"

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Number of items: 10.

Article

Virmontois, Cédric and Goiffon, Vincent and Robbins, Mark S. and Tauziède, Laurie and Geoffray, Hervé and Raine, Mélanie and Girard, Sylvain and Gilard, Olivier and Magnan, Pierre and Bardoux, Alain Dark Current Random Telegraph Signals in Solid-State Image Sensors. (2013) IEEE Transactions on Nuclear Science, vol. 60 (n° 6). pp. 4323-4331. ISSN 0018-9499

Raine, Mélanie and Goiffon, Vincent and Girard, Sylvain and Rousseau, Adrien and Gaillardin, Marc and Paillet, Philippe and Duhamel, Olivier and Virmontois, Cédric Modeling Approach for the Prediction of Transient and Permanent Degradations of Image Sensors in Complex Radiation Environments. (2013) IEEE Transactions on Nuclear Science, vol. 60 (n° 6). pp. 4297-4304. ISSN 0018-9499

Gaillardin, Marc and Girard, Sylvain and Paillet, Philippe and Leray, Jean-Luc and Goiffon, Vincent and Magnan, Pierre and Marcandella, Claude and Martinez, Martial and Raine, Mélanie and Duhamel, Olivier and Richard, Nicolas and Andrieu, F. and Barraud, S. and Faynot, O. Investigations on the vulnerability of advanced CMOS technologies to MGy dose environments. (2013) IEEE Transactions on Nuclear Science, 60 (4). pp. 2590-2597. ISSN 0018-9499

Gaillardin, Marc and Goiffon, Vincent and Marcandella, Claude and Girard, Sylvain and Martinez, Martial and Paillet, Philippe and Magnan, Pierre and Estribeau, Magali Radiation Effects in CMOS Isolation Oxides: Differences and Similarities With Thermal Oxides. (2013) IEEE Transactions on Nuclear Science, vol. 60 (n° 4). pp. 2623-2629. ISSN 0018-9499

Girard, Sylvain and Mescia, L. and Vivona, M. and Laurent, A. and Ouerdane, Y. and Marcandella, C. and Prudenzano, F. and Boukenter, A. and Robin, T. and Paillet, P. and Goiffon, Vincent and Gaillardin, Marc and Cadier, B. and Pinsard, E. and Cannas, M. and Boscaino, R. Design of Radiation-Hardened Rare-Earth Doped Amplifiers Through a Coupled Experiment/Simulation Approach. (2013) Journal of Lightwave Technology (JLT), vol. 31 (n° 8). pp. 1247-1254. ISSN 0733-8724

Paillet, Philippe and Goiffon, Vincent and Chabane, Aziouz and Girard, Sylvain and Rousseau, Adrien and Darbon, Stéphane and Duhamel, Olivier and Raine, Mélanie and Cervantes, Paola and Gaillardin, Marc and Bourgade, Jean-Luc and Magnan, Pierre and Glebov, Vladimir Yu and Pien, Gregory Hardening approach to use CMOS image sensors for fusion by inertial confinement diagnostics. (2013) IEEE Transactions on Nuclear Science, vol. 60 (n° 6). pp. 4349-4355. ISSN 0018-9499

Virmontois, Cédric and Goiffon, Vincent and Corbière, Franck and Magnan, Pierre and Girard, Sylvain and Bardoux, Alain Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors. (2012) IEEE Transactions on Nuclear Science, vol. 59 (n° 6). pp. 2872-2877. ISSN 0018-9499

Goiffon, Vincent and Estribeau, Magali and Marcelot, Olivier and Cervantes, Paola and Magnan, Pierre and Gaillardin, Marc and Virmontois, Cédric and Martin-Gonthier, Philippe and Molina, Romain and Corbière, Franck and Girard, Sylvain and Paillet, Philippe and Marcandella, Claude Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose. (2012) IEEE Transactions on Nuclear Science, vol. 59 (n° 6). pp. 2878-2887. ISSN 0018-9499

Conference or Workshop Item

Bouzgarrou, Ghazi and Bury, Yannick and Jamme, Stéphane and Joly, Laurent and Haas, Jean-François Experimental determination of the growth rate of Richtmyer-Meshkov induced turbulent mixing after reshock. (2013) In: 29th International Symposium on Shock Waves - ISSW29, 14-19 Jul 2013, Madison, USA .

Goiffon, Vincent and Estribeau, Magali and Marcelot, Olivier and Cervantes, Paola and Magnan, Pierre and Gaillardin, Marc and Virmontois, Cédric and Martin-Gonthier, Philippe and Molina, Romain and Corbière, Franck and Girard, Sylvain and Paillet, Philippe and Marcandella, Claude Radiation Effects on Pinned Photodiode CMOS Image Sensors: Overview of Pixel Performance Degradation Due to Total Ionizing Dose. (2012) In: Workshop on Radiation Effects in Optoelectronic Detectors, 28 November 2012 - 29 November 2012 (Toulouse, France). (Unpublished)

This list was generated on Sat Oct 25 19:55:52 2014 CEST.