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High quality graphene synthesized by atmospheric pressure CVD on copper foil

Trinsoutrot, Pierre and Rabot, Caroline and Vergnes, Hugues and Delamoreanu, Alexandru and Zenasni, Aziz and Caussat, Brigitte High quality graphene synthesized by atmospheric pressure CVD on copper foil. (2013) Surface and Coatings Technology, vol. 230. pp. 87-92. ISSN 0257-8972

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Official URL: http://dx.doi.org/10.1016/j.surfcoat.2013.06.050

Abstract

Graphene was synthesized at 1000 °C by Atmospheric Pressure Chemical Vapor Deposition on copper foil from methane diluted in argon and hydrogen. The influence of the main synthesis parameters was studied on 2 × 2 cm2 foils in order to obtain continuous monolayer graphenewithout crystalline defect. The uniformity, crystal quality and number of layers of graphenewere analyzed by Raman spectroscopy and Scanning Electronic Microscopy. First, an increase of the annealing pre-treatment duration induced an increase of the average size of copper grains, leading to larger graphene flakes of higher crystallinity presenting a lower number of layers. Similar evolutions of graphene characteristics were observed when decreasing the methane concentration to 20 ppm, whereas an increase of run duration led to a loss of graphene quality and to a higher number of graphene layers, confirming that graphene formation is not self-limiting on copper. An optimum hydrogen/methane ratio was found, quite different from other results of the literature, probably due to differences in the copper pre-treatment step. Finally, an optimized three step processwas developed to formmonolayer continuous graphene of high quality, successfully transposed to 7 × 7 cm2 substrates after a reactor scale-up.

Item Type:Article
Additional Information:Thanks to Elsevier editor. The definitive version is available at http://www.sciencedirect.com/ The original PDF of the article can be found at Surface and Coatings Technology website : http://dx.doi.org/10.1016/j.surfcoat.2013.06.050 This paper was presented at 19th European Conference on Chemical Vapor Deposition (EuroCVD19), Varna, Bulgaria, 1st - 6th September 2013
HAL Id:hal-00908798
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE)
French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE)
Université de Toulouse > Institut National Polytechnique de Toulouse - INPT (FRANCE)
Other partners > MINATEC (FRANCE)
Université de Toulouse > Université Paul Sabatier-Toulouse III - UPS (FRANCE)
Other partners > Ecole Polytechnique (FRANCE)
Other partners > Université Joseph Fourier Grenoble 1 - UJF (FRANCE)
Laboratory name:
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Deposited By: Vincent GERBAUD
Deposited On:21 Oct 2013 08:49

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