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Enhanced Radiation-Induced Narrow Channel Effects in Commercial 0.18 μm Bulk Technology

Gaillardin, Marc and Goiffon, Vincent and Girard, Sylvain and Martinez, Martial and Magnan, Pierre and Paillet, Philippe Enhanced Radiation-Induced Narrow Channel Effects in Commercial 0.18 μm Bulk Technology. (2011) IEEE Transactions on Nuclear Science, Vol. 58 (p. 6). pp. 2807-2815. ISSN 0018-9499

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Official URL: http://dx.doi.org/10.1109/TNS.2011.2170854

Abstract

Total ionizing dose effects are investigated in input/output transistors that are fabricated by using a commercial 0.18 μm bulk process. An enhanced radiation-induced narrow channel effect is demonstrated in N-type metal-oxide semiconductor (NMOS) and P-type metal-oxide semiconductor (PMOS) transistors, leading to a significant threshold voltage shift which may compromise circuit operations. Calculations using a code dedicated to radiation-induced charge trapping in oxides show that the radiation-induced positive charge trapping in trench oxides leads to the modifications of the electrical characteristics experimentally evidenced. Radiation hardening issues are finally discussed as a function of the device geometry and design.

Item Type:Article
Additional Information:Thanks to IEEE editor. (c) 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. The definitive version is available at http://ieeexplore.ieee.org
Audience (journal):International peer-reviewed journal
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Institution:French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE
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Deposited By:Corinne PRUNIER

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