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Preparation of delafossite CuFeO2 thin films by rf-sputtering on conventional glass substrate

Barnabé, Antoine and Mugnier, E. and Presmanes, Lionel and Tailhades, Philippe Preparation of delafossite CuFeO2 thin films by rf-sputtering on conventional glass substrate. (2006) Materials Letters, vol. 6 (n° 29-). pp. 3468-3470. ISSN 0167-577X

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Official URL: http://dx.doi.org/10.1016/j.matlet.2006.03.033

Abstract

CuFeO2 CuFeO2 is a delafossite-type compound and is a well known p-type semiconductor. The growth of delafossite CuFeO2 thin films on conventional glass substrate by radio-frequency sputtering is reported. The deposition, performed at room temperature leads to an amorphous phase with extremely low roughness and high density. The films consisted of a well crystallized delafossite CuFeO2 after heat treatment at 450 °C in inert atmosphere. The electrical conductivity of the film was 1 mS/cm. The direct optical band gap was estimated to be 2 eV.

Item Type:Article
Additional Information:This publication is available on http://www.sciencedirect.com/science/journal/0167577X
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution: Université de Toulouse > Institut National Polytechnique de Toulouse - INPT
Université de Toulouse > Université Paul Sabatier-Toulouse III - UPS
French research institutions > Centre National de la Recherche Scientifique - CNRS
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Deposited By: Thomas Bonnecarere

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