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Electrical and mechanical characterisation of Si/Al ohmic contacts on diamond

Civrac de Fabian, Gabriel and Msolli, Sabeur and Alexis, Joël and Dalverny, Olivier and Schneider, Henri Electrical and mechanical characterisation of Si/Al ohmic contacts on diamond. (2010) IEEE Electronics Letters , 46 (11). 791-793. ISSN 0013-5194

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Official URL: http://dx.doi.org/10.1049/el.2010.0803

Abstract

A new ohmic contact technology on diamond with low resistivity is presented. A Si/AI metallisation is used and leads to a 7 10-6 A.cm2 specific contact resistivity, measured by the transfer length method. Comparison is made between this technology and the Ti/Pt/Au traditional technology. Both technologies show very good electrical, thermal and mechanical characteristics.

Item Type:Article
Additional Information:Thanks to Institution of Engineering and Technology editor.The definitive version is available at http://ieeexplore.ieee.org/ The original PDF of the article can be found at Electronics Letters website : http://dx.doi.org/10.1049/el.2010.0803
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE)
Université de Toulouse > Institut National Polytechnique de Toulouse - INPT (FRANCE)
Université de Toulouse > Institut National des Sciences Appliquées de Toulouse - INSA (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Université de Toulouse > Université Toulouse III - Paul Sabatier - UPS (FRANCE)
Université de Toulouse > Université Toulouse - Jean Jaurès - UT2J (FRANCE)
Université de Toulouse > Université Toulouse 1 Capitole - UT1 (FRANCE)
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Deposited By: Joël ALEXIS
Deposited On:04 Mar 2013 11:08

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