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An assessment of contact metallization for high power and high temperature diamond Schottky devices

Koné, Sodjan and Schneider, Henri and Isoird, Karine and Thion, Fabien and Achard, Jocelyn and Issaoui, Riadh and Msolli, Sabeur and Alexis, Joël An assessment of contact metallization for high power and high temperature diamond Schottky devices. (2012) Diamond and Related Materials, vol. 27-28. pp. 23-28. ISSN 0925-9635

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Official URL: http://dx.doi.org/10.1016/j.diamond.2012.05.007

Abstract

Different metals W, Al, Ni and Cr were evaluated as Schottky contacts on the same p-type lightly boron doped homoepitaxial diamond layer. The current–voltage (I–V) characteristics, the series resistance and the thermal stability are discussed in the range of RT to 625 K for all Schottky devices. High current densities close to 3.2 kA/cm2 are displayed and as the series resistance decreases with increasing temperature, proving the potential of diamond for high power and high temperature devices. The thermal stability of metal/diamond interface investigated with regards to the Schottky barrier height (SBH) and ideality factor n fluctuations indicated that Ni and W are thermally stable in the range of RT to 625 K. Current–voltage measurements at reverse bias indicated a maximum breakdown voltage of 70 V corresponding to an electric field of 3.75 MV/cm. Finally, these electrical measurements have been completed with mechanical adhesion tests of contact metallizations on diamond by nano-scratching technique. These studies clearly reveal Ni as a promising contact metallization for high power, high temperature and good mechanical strength diamond Schottky barrier diode applications.

Item Type:Article
Additional Information:Thanks to Elsevier editor. The definitive version is available at http://www.sciencedirect.com The original PDF of the article can be found at Diamond and Related Materials website : http://www.sciencedirect.com/science/journal/09259635
HAL Id:hal-00881007
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE)
Université de Toulouse > Institut National Polytechnique de Toulouse - INPT (FRANCE)
Université de Toulouse > Institut National des Sciences Appliquées de Toulouse - INSA (FRANCE)
Other partners > Institut National des Sciences Appliquées de Lyon - INSA (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Université de Toulouse > Université Toulouse III - Paul Sabatier - UPS (FRANCE)
Université de Toulouse > Université Toulouse - Jean Jaurès - UT2J (FRANCE)
Université de Toulouse > Université Toulouse 1 Capitole - UT1 (FRANCE)
Other partners > Université Claude Bernard-Lyon I - UCBL (FRANCE)
Other partners > Ecole Centrale de Lyon (FRANCE)
Other partners > THERMOCONCEPT (FRANCE)
Other partners > TomoAdour (FRANCE)
Laboratory name:
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Deposited By: Joël ALEXIS
Deposited On:09 Oct 2013 07:44

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