Gasquères, Cyril and Duminica, Florin-Daniel and Maury, Francis and Ossolab, F. MOCVD of Cr3(C,N)2 and CrSixCy Films Growth and Characterization. (2005) Journal of The Electrochemical Society (JES), vol. 1 (n° 8). G651-G659. ISSN 0013-4651
(Document in English)
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Official URL: http://dx.doi.org/10.1149/1.1939486
CrCxNy and CrSixCy thin films were deposited under low pressure by metallorganic chemical vapor deposition (MOCVD) in the temperature ranges 380-450°C and 450-500°C, respectively, using Cr(NEt2)4 and CrCH2SiMe34 as single-source precursors.The growth was achieved in a cold-wall vertical reactor using, respectively, H2 and He as the carrier gases. Both types of films exhibit a mirrorlike surface morphology and are amorphous asdeposited. The CrCxNy layers start to crystallize at 600°C after annealing for 1 h under vacuum,whereas it is necessary to reach 650°C under H2 atmosphere. In both cases, the original ternary phase Cr3(C0.8N0.2)2 crystallizes. The resistivity of as-deposited amorphous CrCxNy films is typically 600. cm, and it decreases to 150 #. cm after annealing upon the formation of polycrystalline Cr3#C,N#2 films. The CrSixCy layers have a very stable amorphous structure until 850°C for 4 h. In spite of their metallic appearance, they exhibit a high resistivity compared to the Cr3#C,N#2 films. The main characteristics of these Cr-based layers is presented and discussed.
|Additional Information:||Thanks to Electrochemical Society editor. The definitive version is available at http://scitation.aip.org/vsearch/servlet/VerityServlet?KEY=JESOAN&smode=strresults&sort=rel&maxdisp=25&threshold=0&pjournals=JESOAN&possible1zone=title&possible4=gasqueres&possible4zone=author&bool4=and&OUTLOG=NO&viewabs=JESOAN&key=DISPLAY&docID=2&page=1&chapter=0|
|Audience (journal):||International peer-reviewed journal|
|Institution:|| Université de Toulouse > Institut National Polytechnique de Toulouse - INPT|
Université de Toulouse > Université Paul Sabatier-Toulouse III - UPS
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French research institutions > Centre National de la Recherche Scientifique - CNRS
|Deposited By:||Thomas Bonnecarere|
|Deposited On:||24 Sep 2008 15:05|
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