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Gate-dependent magnetoresistance phenomena in carbon nanotubes

Fedorov, G. and Lassagne, Benjamin and Sagnes, M. and Raquet, Bertrand and Broto, Jean-Marc and Triozon, François and Roche, Stephan and Flahaut, Emmanuel Gate-dependent magnetoresistance phenomena in carbon nanotubes. (2005) Physical review letters , vol. 9 . pp. 066801.1-066801.4 . ISSN 0031-9007

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Official URL: http://link.aps.org/doi/10.1103/PhysRevLett.94.066801

Abstract

We report on the first experimental study of the magnetoresistance of double-walled carbon nanotubes under magnetic field as large as 50 Tesla. By varying the field orientation with respect to the tube axis, or by gate-mediated shifting the Fermi level position, evidences for unconventional magnetoresistance are presented and interpreted by means of theoretical calculations.

Item Type:Article
Additional Information:Thanks to American Physical Society editor. The definitive version is available at http://prola.aps.org/ The original PDF of the article can be found at Physical review letters website : http://prl.aps.org/
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution: Université de Toulouse > Institut National Polytechnique de Toulouse - INPT
French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA
Université de Toulouse > Université Paul Sabatier-Toulouse III - UPS
French research institutions > Centre National de la Recherche Scientifique - CNRS
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Deposited By:Thomas Bonnecarere

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