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In-Pixel source follower transistor RTS noise behavior under ionizing radiation in CMOS image sensors

Martin-Gonthier, Philippe and Goiffon, Vincent and Magnan, Pierre In-Pixel source follower transistor RTS noise behavior under ionizing radiation in CMOS image sensors. (2012) IEEE Transactions on Electron Devices, vol. 59 (n° 6). pp. 1686-1692. ISSN 0018-9383

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Official URL: http://dx.doi.org/10.1109/TED.2012.2189115

Abstract

This paper presents temporal noise measurement results for several total ionizing dose (TID) steps up to 2.19 Mrad of an image sensor designed with a 0.18-μm CMOS image sensor process. The noise measurements are focused on the random telegraph signal (RTS) noise due to the in-pixel source follower transistor of the sensor readout chain inducing noisy pixels. Results show no significant RTS noise degradation up to 300 krad of TID. Beyond this TID step, a limited RTS noise degradation is observed, and for the 2.19-Mrad step, an additional increase of total noise, including thermal, 1/f, and RTS noises, is noted. Noisy pixels have been studied for high TIDs, and three cases have been observed: 1) no change on RTS behavior; 2) creation of RTS behavior; and 3) modifications of RTS behavior.

Item Type:Article
Additional Information: Thanks to IEEE editor. (c) 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. The definitive version is available at http://ieeexplore.ieee.org
Audience (journal):International peer-reviewed journal
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Institution: Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE
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Deposited By: Philippe MARTIN-GONTHIER
Deposited On:03 May 2012 13:29

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