Virmontois, Cédric and Goiffon, Vincent and Magnan, Pierre and Girard, Sylvain and Saint-Pé, Olivier and Petit, Sophie and Rolland, Guy and Bardoux, Alain Influence of displacement damage dose on dark current distributions of irradiated CMOS image sensors. In: Radiation Effects on Components and Systems Conference, 19-23 Sept. 2011, Sevilla, Spain.
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Dark current increase distributions due to displacement damages are modeled using displacement damage dose concept. Several CMOS image sensors have been exposed to neutrons or protons and we have characterized their degradation in terms of dark current increase. We have been able to extract a set of two factors from the experimental dark current increase distributions. These factors are used to predict and build dark current increase distribution and leads to a better understanding of displacement damage effects on CMOS image sensors.
|Item Type:||Conference or Workshop Item (Paper)|
|Audience (conference):||International conference proceedings|
|Institution:||French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA|
French research institutions > Centre National des Etudes Spatiales - CNES
Other partners > EADS - Astrium (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE
|Deposited By:||Cedric VIRMONTOIS|
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