Goiffon, Vincent and Virmontois, Cédric and Magnan, Pierre Investigation of dark current random telegraph signal in pinned photodiode CMOS image sensors. (2011) In: IEEE International Electron Devices Meeting (IEDM 2011), 05-07 Dec 2011, Washington, USA.
![[img]](http://oatao.univ-toulouse.fr/style/images/fileicons/application_pdf.png)
| (Document in English) PDF (Author's version) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader 451Kb |
Abstract
The characteristics of Dark Current Random Telegraph Signal (DC-RTS), observed in Pinned PhotoDiode (PPD) CMOS Image Sensors (CIS), are investigated thanks to a dedicated analysis tool. Our results demonstrate, for the first time in PPD CIS, that this DC-RTS is due to meta-stable oxide interface SRH generation centers located in the transfer gate depletion region.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Audience (conference): | International conference proceedings |
| Uncontrolled Keywords: | |
| Institution: | Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE |
| Laboratory name: | Département d'Electronique, Optronique et Signal - DEOS (Toulouse, France) - Image Sensor Research Team |
| Statistics: | download |
| Total amount of citations (from ISI Web of Science): | 0 |
| Deposited By: | Vincent Goiffon |
Repository Staff Only: item control page
