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Investigation of dark current random telegraph signal in pinned photodiode CMOS image sensors

Goiffon, Vincent and Virmontois, Cédric and Magnan, Pierre Investigation of dark current random telegraph signal in pinned photodiode CMOS image sensors. (2011) In: IEEE International Electron Devices Meeting (IEDM 2011), 05-07 Dec 2011, Washington, USA .

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Abstract

The characteristics of Dark Current Random Telegraph Signal (DC-RTS), observed in Pinned PhotoDiode (PPD) CMOS Image Sensors (CIS), are investigated thanks to a dedicated analysis tool. Our results demonstrate, for the first time in PPD CIS, that this DC-RTS is due to meta-stable oxide interface SRH generation centers located in the transfer gate depletion region.

Item Type:Conference or Workshop Item (Paper)
Audience (conference):International conference proceedings
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Institution: Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE
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Deposited By: Vincent Goiffon

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