Goiffon, Vincent and Virmontois, Cédric and Magnan, Pierre and Cervantes, Paola and Gaillardin, Marc and Girard, Sylvain and Paillet, Philippe and Martin-Gonthier, Philippe Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors. (2011) In: Radiation Effects on Components and Systems Conference, 19-23 Sept. 2011, Sevilla, Spain .
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Official URL: http://dx.doi.org/10.1109/RADECS.2011.6131311
This paper presents an investigation of Total Ionizing Dose induced dark current sources in Pinned PhotoDiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed at a time enabling the direct evaluation of its contribution to the observed device degradation. By this approach, the origin of radiation induced dark current in PPD is localized on the pixel layout. The PPD peripheral STI does not seem to play a role in the degradation. The PPD area and an additional contribution independent on the pixel dimensions appear to be the main sources of the TID induced dark current increase.
|Item Type:||Conference or Workshop Item (Paper)|
|Additional Information:||Thanks to IEEE editor. (c) 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. The definitive version is available at http://ieeexplore.ieee.org|
|Audience (conference):||International conference proceedings|
|Institution:||French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE)|
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE (FRANCE)
|Deposited By:||Vincent Goiffon|
|Deposited On:||28 Nov 2011 16:16|
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