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Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes

Goiffon, Vincent and Cervantes, Paola and Virmontois, Cédric and Corbière, Franck and Magnan, Pierre and Estribeau, Magali Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes. (2011) IEEE Transaction on Nuclear Sciences (n° 99). ISSN 0018-9499

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Official URL: http://dx.doi.org/10.1109/TNS.2011.2171502

Abstract

Selected radiation hardened photodiode layouts, manufactured in a deep submicron CMOS Image Sensor technology, are irradiated by 60Co gamma-rays up to 2.2 Mrad(SiO2) and studied in order to identify the most efficient structures and the guidelines (recess distance, bias voltage) to follow to make them work efficiently in such technology. To do so, both photodiode arrays and active pixel sensors are used. After 2.2 Mrad(SiO2), the studied sensors are fully functional and most of the radiation hardened photodiodes exhibit radiation induced dark current values more than one order of magnitude lower than the standard photodiode.

Item Type:Article
Additional Information:Thanks to IEEE editor. (c) 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.The definitive version is available at http://ieeexplore.ieee.org
Audience (journal):International peer-reviewed journal
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Institution: Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE
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Deposited By:Vincent Goiffon

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