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Total ionizing dose versus displacement damage dose induced dark current random telegraph signals in CMOS image sensors

Virmontois, Cédric and Goiffon, Vincent and Magnan, Pierre and Saint-Pé, Olivier and Girard, Sylvain and Petit, Sophie and Rolland, Guy and Bardoux, Alain Total ionizing dose versus displacement damage dose induced dark current random telegraph signals in CMOS image sensors. (2011) IEEE Transactions on Nuclear Science, vol. 58 (n° 6). pp. 3085-3094. ISSN 0018-9499

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Official URL: http://dx.doi.org/10.1109/TNS.2011.2171005

Abstract

Dark current Random Telegraph Signals due to total ionizing dose (TID) and displacement damage dose (DDD) are in- vestigated in CMOS image sensors. Discrepancies between both RTS are emphasised to better understand the microscopic origins of the phenomena.

Item Type:Article
Additional Information:Thanks to IEEE editor. (c) 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.The definitive version is available at http://ieeexplore.ieee.org
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA
French research institutions > Centre National des Etudes Spatiales - CNES
Other partners > EADS - Astrium (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE
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Deposited By: Cedric VIRMONTOIS

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