Rissons, Angélique and Perchoux, Julien and Mollier, Jean-Claude and Grabherr, Martin Noise and signal modeling of various VCSEL structures. (2004) In: SPIE Photonics West, 14-29 Jan 2004, San Jose, United States .
(Document in English)
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Official URL: http://dx.doi.org/10.1117/12.528967
Current evolution in Datacoms and Gigabit Ethernet have made 850nm Vertical Cavity Surface Emitting Lasers(VCSEL) the most important and promising emitter. Numerous different structures have been growth, to obtain bestcurrent confinement and then to control the emitted light modal behavior. We have developed a small signal equivalent electrical model of VCSEL including Bragg reflectors, active area, chip connection and noise behavior. Easy tointegrate with classical software for circuit studies, this model which is widely adaptable for different structures takesinto account the complete electrical environment of the chip. An experimental validation for RF modulation up to 10GHz has been realized on oxide confined VCSEL, demonstrating that the model could be used to get realistic valuesfor the VCSEL intrinsic parameters.Including Langevin noise sources into the rate equations and using the same electrical analogy, noise current andvoltage sources can be added to the model. It allows good prediction for the RIN function shape up to 10GHz formonomodal emitter.
|Item Type:||Conference or Workshop Item (Paper)|
|Additional Information:||Thanks to SPIE. The definitive version is available at http://spiedl.aip.org/ The original PDF of the article can be found at : http://dx.doi.org/10.1117/12.528967|
|Audience (conference):||International conference proceedings|
|Institution:|| Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE|
Other partners > U-L-M Photonics (GERMANY)
Département d'Electronique, Optronique et Signal - DEOS (Toulouse, France) - Micro-ondes et Optique pour Systèmes Embarqués - MOSE
|Deposited By:||Angelique Rissons|
|Deposited On:||04 Jun 2008 15:30|
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