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Preparation and characterization of the defect–conductivity relationship of Ga-doped ZnO thin films deposited by nonreactive radio-frequency–magnetron sputtering

Lalanne, Maëva and Soon, J.M. and Barnabé, Antoine and Presmanes, Lionel and Pasquet, Isabelle and Tailhades, Philippe Preparation and characterization of the defect–conductivity relationship of Ga-doped ZnO thin films deposited by nonreactive radio-frequency–magnetron sputtering. (2010) Journal of Materials Research, vol. 25 (n° 12). pp. 2407-2414. ISSN 0884-2914

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Official URL: http://dx.doi.org/10.1557/JMR.2010.0300

Abstract

Ga-doped ZnO (ZnO:Ga) thin films were prepared by radio-frequency–magnetron sputtering on conventional glass substrates at room temperature. The structural, electrical, and optical properties of these films as a function of argon pressure and film thicknesses were studied. All the films crystallized with the hexagonal wurtzite structure. The x-ray diffraction studies show that the ZnO:Ga films are highly oriented with their crystallographic c-axis perpendicular to the substrate. We discuss a methodology of using a “standardized platform” for comparison of samples deposited at different pressures, which provides an insight into the defect–resistivity relationship of each sample with respect to their microstructure. After the first annealing, the electrical properties of the films are dependent on the atmosphere used during postdeposition annealing treatment. A resistivity of 2.5 × 10−3 Ω · cm was obtained after vacuum annealing, and the films became an insulator after air annealing. The reproducibility of this treatment was verified. The average transmittance of all ZnO:Ga thin films is more than 85% in the visible range.

Item Type:Article
Additional Information:Thanks to Materials Research Society editor. The definitive version is available at http://www.mrs.org/home/ The original PDF of the article can be found at Journal of Materials Research website : http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=7952597&fulltextType=RA&fileId=S0884291400035950. DOI is wrong
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:French research institutions > Centre National de la Recherche Scientifique - CNRS
Université de Toulouse > Institut National Polytechnique de Toulouse - INPT
Université de Toulouse > Université Paul Sabatier-Toulouse III - UPS
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Deposited By: Leila Abdelouhab

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