Chamoire, Audrey and Gascoin, Franck and Estournès, Claude and Caillat, Thierry and Tédenac, Jean-Claude High-Temperature Transport Properties of Yb4−xSmxSb3. (2010) Journal of Electronic Materials, vol. 39 (n° 9). pp. 1579-1582. ISSN 0361-5235
|(Document in English) |
PDF (Author's version) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
Official URL: http://dx.doi.org/10.1007/s11664-010-1274-5
Polycrystalline L4Sb3 (L = La, Ce, Sm, and Yb) and Yb4−x Sm x Sb3, which crystallizes in the anti-Th3P4 structure type (I-43d no. 220), were synthesized via high-temperature reaction. Structural and chemical characterization were performed by x-ray diffraction and electronic microscopy with energy-dispersive x-ray analysis. Pucks were densified by spark plasma sintering. Transport property measurements showed that these compounds are n-type with low Seebeck coefficients, except for Yb4Sb3, which shows semimetallic behavior with hole conduction above 523 K. By partially substituting Yb by a trivalent rare earth we successfully improved the thermoelectric figure of merit of Yb4Sb3 up to 0.7 at 1273 K.
Repository Staff Only: item control page