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Evidence of a novel source of random telegraph signal in CMOS image sensors

Goiffon, Vincent and Magnan, Pierre and Martin-Gonthier, Philippe and Virmontois, Cédric and Gaillardin, Marc Evidence of a novel source of random telegraph signal in CMOS image sensors. (2011) IEEE Electron Device Letters, vol. 32 (n° 6). pp. 773-775. ISSN 0741-3106

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Official URL: http://dx.doi.org/10.1109/LED.2011.2125940

Abstract

This letter reports a new source of dark current random telegraph signal in CMOS image sensors due to meta-stable Shockley-Read-Hall generation mechanism at oxide interfaces. The role of oxide defects is discriminated thanks to the use of ionizing radiations. A dedicated RTS detection technique and several test conditions (radiation dose, temperature, integration time, photodiode bias) reveal the particularities of this novel source of RTS.

Item Type:Article
Additional Information:Thanks to IEEE editor. The definitive version is available at http://ieeexplore.ieee.org/ The original PDF of the article can be found at IEEE Electron Device Letters website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE
Laboratory name:
Département d'Electronique, Optronique et Signal - DEOS (Toulouse, France) - Conception d’Imageurs Matriciels Intégrés - CIMI
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Deposited By: Vincent Goiffon
Deposited On:27 Apr 2011 07:45

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