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Displacement damage effects due to neutron and proton irradiations on CMOS image sensors manufactured in deep submicron technology

Virmontois, Cédric and Goiffon, Vincent and Magnan, Pierre and Girard, Sylvain and Inguimbert, Christophe and Petit, Sophie and Rolland, Guy and Saint-Pé, Olivier Displacement damage effects due to neutron and proton irradiations on CMOS image sensors manufactured in deep submicron technology. (2010) IEEE Transactions on Nuclear Science, vol. 57 (n° 6). pp. 3101-3108. ISSN 0018-9499

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Official URL: http://dx.doi.org/10.1109/TNS.2010.2085448

Abstract

Displacement damage effects due to proton and neutron irradiations of CMOS image sensors dedicated to imaging are presented through the analysis of the dark current behavior in pixel arrays and isolated photodiodes. The mean dark current increase and the dark current nonuniformity are investigated. Dark current histogram observations are compared to damage energy distributions based on GEANT 4 calculations. We also discuss, through annealing analysis, which defects could be responsible for the dark current in CMOS image sensors.

Item Type:Article
Additional Information:Thanks to IEEE editor. The definitive version is available on http://ieeexplore.ieee.org
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA
French research institutions > Centre National des Etudes Spatiales - CNES
Other partners > EADS - Astrium (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE
French research institutions > Office National d'Etudes et Recherches Aérospatiales - ONERA
Laboratory name:
Département d'Electronique, Optronique et Signal - DEOS (Toulouse, France) - Conception d’Imageurs Matriciels Intégrés - CIMI
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Deposited By: Cedric VIRMONTOIS
Deposited On:04 Jan 2011 08:56

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