Goiffon, Vincent and Virmontois, Cédric and Magnan, Pierre and Cervantes, Paola and Corbière, Franck and Estribeau, Magali and Pinel, Philippe Radiation damages in CMOS image sensors: testing and hardening challenges brought by deep sub-micrometer CIS processes. (2010) In: SPIE Remote Sensing, 20 - 23 Sept 2010, Toulouse, France .
(Document in English)
PDF (Publisher's version) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
Official URL: http://dx.doi.org/10.1117/12.868443
This paper presents a summary of the main results we observed after several years of study on irradiated custom imagers manufactured using 0,18 µm CMOS processes dedicated to imaging. These results are compared to irradiated commercial sensor test results provided by the Jet Propulsion Laboratory to enlighten the differences between standard and pinned photodiode behaviors. Several types of energetic particles have been used (gamma rays, X-rays, protons and neutrons) to irradiate the studied devices. Both total ionizing dose (TID) and displacement damage effects are reported. The most sensitive parameter is still the dark current but some quantum eficiency and MOSFET characteristics changes were also observed at higher dose than those of interest for space applications. In all these degradations, the trench isolations play an important role. The consequences on radiation testing for space applications and radiation-hardening-by-design techniques are also discussed.
|Item Type:||Conference or Workshop Item (Paper)|
|Additional Information:||Thanks to Spie. The definitive version is available on http://spiedigitallibrary.org/|
|Audience (conference):||International conference proceedings|
|Institution:||Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE|
Département d'Electronique, Optronique et Signal - DEOS (Toulouse, France) - Conception d’Imageurs Matriciels Intégrés - CIMI
|Deposited By:||Vincent Goiffon|
Repository Staff Only: item control page