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Fluidized-Bed MOCVD of Bi2O3 Thin Films from Bismuth Triphenyl under Atmospheric Pressure

Reuge, Nicolas and Dexpert-Ghys, Jeannette and Caussat, Brigitte Fluidized-Bed MOCVD of Bi2O3 Thin Films from Bismuth Triphenyl under Atmospheric Pressure. (2010) Chemical Vapor Deposition, vol. 1 (n° 4-6). pp. 123-126. ISSN 0948-1907

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Official URL: http://dx.doi.org/10.1002/cvde.200904280

Abstract

Bismuth oxide thin films are of great interest due to their significant band gap, high refractive index, and dielectric permittivity, as well as marked photoconductivity and photoluminescence.[1] These properties make Bi2O3 films well suited for many applications such as microelectronics,[2] sensor technology,[3] optical coatings,[4] and ceramic glass manufacturing.[5] In this work, we report the synthesis of Bi2O3 films on alumina particles using fluidized bed (FB) CVD under atmospheric pressure. Bismuth triphenyl (Bi(Ph)3) was used as a metal-organic (MO) CVD precursor.

Item Type:Article
Additional Information:The definitive version is available at http://onlinelibrary.wiley.com/doi/10.1002/cvde.200904280/abstract
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:French research institutions > Centre National de la Recherche Scientifique - CNRS
Université de Toulouse > Ecole des Mines d'Albi-Carmaux - EMAC
Université de Toulouse > Institut National Polytechnique de Toulouse - INPT
Université de Toulouse > Institut National des Sciences Appliquées de Toulouse - INSA
Université de Toulouse > Université Paul Sabatier-Toulouse III - UPS
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Deposited By: Brigitte CAUSSAT-BONNANS
Deposited On:21 Oct 2010 07:24

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