Barnabé, Antoine and Lalanne, Maëva and Presmanes, Lionel and Soon, J.M. and Tailhades, Philippe and Dumas, Carine and Grisolia, J. and Arbouet, A. and Paillard, Vincent and Ben Assayag, G. and van den Boogaart, M.A.F. and Savu, V. and Brugger, Jürgen and Normand, P. Structured ZnO-based contacts deposited by non-reactive rf magnetron sputtering on ultra-thin SiO2/Si through a stencil mask. (2009) Thin Solid Films, vol. 518 (n° 4). 1044-1047 . ISSN 0040-6090
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Official URL: http://dx.doi.org/10.1016/j.tsf.2009.03.232
In this paper, we study the localized deposition of ZnO micro and nanostructures deposited by non-reactive rf-magnetron sputtering through a stencil mask on ultra-thin (10 nm) SiO2 layers containing a single plane of silicon nanocrystals (NCs), synthetized by ultra-low energy ion implantation followed by thermal annealing. The localized ZnO-deposited areas are reproducing the exact stencil mask patterns. A resistivity of around 5×10−3 Ω cm is measured on ZnO layer. The as-deposited ZnO material is 97% transparent above the wavelength at 400 nm. ZnO nanostructures can thus be used as transparent electrodes for Si NCs embedded in the gate-oxide of MOS devices.
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