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RTS noise impact in CMOS image sensors readout circuit

Martin-Gonthier, Philippe and Magnan, Pierre RTS noise impact in CMOS image sensors readout circuit. (2010) In: 16th IEEE International Conference on Electronics, Circuits, and Systems - ICECS 2009, 13-16 Dec 2009, Hammamet, Tunisia .

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Official URL: http://dx.doi.org/10.1109/ICECS.2009.5410825

Abstract

CMOS image sensors are nowadays widely used in imaging applications even for high end applications. This is really possible thanks to a reduction of noise obtained, among others, by Correlated Double Sampling (CDS) readout. Random Telegraph Signal (RTS) noise has thus become an issue for low light level applications especially in the context of downscaling transistor dimension. This paper describes the analysis of in-pixel source follower transistor RTS noise filtering by CDS circuit. The measurement of a non Gaussian distribution with a positive skew of image sensor output noise is analysed and dimension (W and L) impact of the in-pixel source follower is analysed.

Item Type:Conference or Workshop Item (Lecture)
Additional Information:Thanks to the Institute of Electrical and Electronics Engineers (IEEE). The original PDF can be found on the IEEE website: http://ieeexplore.ieee.org/
Audience (conference):International conference proceedings
Uncontrolled Keywords:
Institution: Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE
Laboratory name:
Département d'Electronique, Optronique et Signal - DEOS (Toulouse, France) - Conception d’Imageurs Matriciels Intégrés - CIMI
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Deposited By: Philippe MARTIN-GONTHIER
Deposited On:04 Jan 2010 15:00

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