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Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology

Goiffon, Vincent and Estribeau, Magali and Magnan, Pierre Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology. (2009) IEEE Transactions on Electron Devices, vol. 5 (n° 11). pp. 2594 -2601. ISSN 0018-9383

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Official URL: http://dx.doi.org/10.1109/TED.2009.2030623

Abstract

An overview of ionizing radiation effects in imagers manufactured in a 0.18-μm CMOS image sensor technology is presented. Fourteen types of image sensors are characterized and irradiated by a 60Co source up to 5 kGy. The differences between these 14 designs allow us to separately estimate the effect of ionizing radiation on microlenses, on low- and zero-threshold-voltage MOSFETs and on several pixel layouts using P+ guard-rings and edgeless transistors. After irradiation, wavelength dependent responsivity drops are observed. All the sensors exhibit a large dark current increase attributed to the shallow trench isolation that surrounds the photodiodes. Saturation voltage rises and readout chain gain variations are also reported. Finally, the radiation hardening perspectives resulting from this paper are discussed.

Item Type:Article
Additional Information:Thanks to the Institute of Electrical and Electronics Engineers (IEEE).The original PDF can be found on the IEEE website: http://ieeexplore.ieee.org/search/wrapper.jsp?arnumber=5272218
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution: Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE
Laboratory name:
Département d'Electronique, Optronique et Signal - DEOS (Toulouse, France) - Conception d’Imageurs Matriciels Intégrés - CIMI
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Deposited By:Vincent Goiffon

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