OATAO - Open Archive Toulouse Archive Ouverte Open Access Week

Ionization versus displacement damage effects in proton irradiated CMOS sensors manufactured in deep submicron process

Goiffon, Vincent and Magnan, Pierre and Saint-Pé, Olivier and Bernard, Frédéric and Rolland, Guy Ionization versus displacement damage effects in proton irradiated CMOS sensors manufactured in deep submicron process. (2009) Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, vol. 610 (n° 1). pp. 225-229. ISSN 0168-9002

[img] (Document in English)

PDF (Author's version) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
363kB

Official URL: http://dx.doi.org/10.1016/j.nima.2009.05.078

Abstract

Proton irradiation effects have been studied on CMOS image sensors manufactured in a 0.18 μm technology dedicated to imaging. The ionizing dose and displacement damage effects were discriminated and localized thanks to 60Co irradiations and large photodiode reverse current measurements. The only degradation observed was a photodiode dark current increase. It was found that ionizing dose effects dominate this rise by inducing generation centers at the interface between shallow trench isolations and depleted silicon regions. Displacement damages are responsible for a large degradation of dark current non-uniformity. This work suggests that designing a photodiode tolerant to ionizing radiation can mitigate an important part of proton irradiation effects.

Item Type:Article
Additional Information:Thanks to Elsevier editor. The definitive version is available at http://www.sciencedirect.com The original PDF of the article can be found in : Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Volume 610, Issue 1, 21 October 2009, Pages 225-229
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution: Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE
Other partners > EADS - Astrium (FRANCE)
French research institutions > Centre National des Etudes Spatiales - CNES
Laboratory name:
Département d'Electronique, Optronique et Signal - DEOS (Toulouse, France) - Conception d’Imageurs Matriciels Intégrés - CIMI
Statistics:download
Deposited By: Vincent Goiffon
Deposited On:03 Sep 2009 15:04

Repository Staff Only: item control page