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Proton and g-ray irradiation on deep sub-micron processed CMOS image sensor

Virmontois, Cédric and Djité, Ibrahima and Goiffon, Vincent and Estribeau, Magali and Magnan, Pierre Proton and g-ray irradiation on deep sub-micron processed CMOS image sensor. (2009) In: International symposium on reliability of optoelectronics for space (ISROS 2009), 11-15 May 2009, Cagliari, Italy .

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Abstract

We present here a study on Active Pixel Sensor processed thanks to CMOS deep sub-micron technology dedicated to imaging. Isolated single photodiodes and 128x128 3T-pixel arrays were designed on the test chips. These devices were exposed to 60Co g-ray and proton irradiation to observe the space environment impact on CMOS image sensors. Ionization and displacement damage induced dark current increases in the photodiode due to interface states and trapped charges. Solutions to harden photodiodes manufactured against space radiation environment are discussed.

Item Type:Conference or Workshop Item (Poster)
Audience (conference):International conference proceedings
Uncontrolled Keywords:
Institution: Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE
Other partners > EADS - Astrium (FRANCE)
French research institutions > Centre National des Etudes Spatiales - CNES
Laboratory name:
Département d'Electronique, Optronique et Signal - DEOS (Toulouse, France) - Conception d’Imageurs Matriciels Intégrés - CIMI
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Deposited By:Cécile de_roquemaurel

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