Martin-Gonthier, Philippe and Magnan, Pierre and Corbière, Franck Overview of CMOS process and design options for image sensor dedicated to space applications. (2005) In: SPIE Remote Sensing 2005, 19-22 Sept 2005, Brugge, Belgium .
(Document in English)
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Official URL: http://dx.doi.org/10.1117/12.633360
With the growth of huge volume markets (mobile phones, digital cameras…) CMOS technologies for image sensor improve significantly. New process flows appear in order to optimize some parameters such as quantum efficiency, dark current, and conversion gain. Space applications can of course benefit from these improvements. To illustrate this evolution, this paper reports results from three technologies that have been evaluated with test vehicles composed of several sub arrays designed with some space applications as target. These three technologies are CMOS standard, improved and sensor optimized process in 0.35µm generation. Measurements are focussed on quantum efficiency, dark current, conversion gain and noise. Other measurements such as Modulation Transfer Function (MTF) and crosstalk are depicted in . A comparison between results has been done and three categories of CMOS process for image sensors have been listed. Radiation tolerance has been also studied for the CMOS improved process in the way of hardening the imager by design. Results at 4, 15, 25 and 50 krad prove a good ionizing dose radiation tolerance applying specific techniques.
|Item Type:||Conference or Workshop Item (Paper)|
|Additional Information:||Sensors, Systems, and Next-Generation Satellites IX - Proceedings of SPIE Volume : 5978 http://dx.doi.org/10.1117/12.633360|
|Audience (conference):||International conference proceedings|
|Institution:||Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE (FRANCE)|
Département d'Electronique, Optronique et Signal - DEOS (Toulouse, France) - Conception d’Imageurs Matriciels Intégrés - CIMI
|Deposited By:||Philippe MARTIN-GONTHIER|
|Deposited On:||14 May 2008 20:15|
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