Goiffon, Vincent and Magnan, Pierre and Bernard, Frédéric and Rolland, Guy and Saint-Pé, Olivier and Huger, Nicolas and Corbière, Franck Ionizing radiation effects on CMOS imagers manufactured in deep submicron process. (2008) In: SPIE Electronic Imaging 2008 : Sensors, Cameras, and Systems for Industrial/Scientific Applications IX, 27-31 Jan 2008, San Jose, United States .
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Official URL: http://dx.doi.org/10.1117/12.767484
We present here a study on both CMOS sensors and elementary structures (photodiodes and in-pixel MOSFETs) manufactured in a deep submicron process dedicated to imaging. We designed a test chip made of one 128×128-3T-pixel array with 10 µm pitch and more than 120 isolated test structures including photodiodes and MOSFETs with various implants and different sizes. All these devices were exposed to ionizing radiation up to 100 krad and their responses were correlated to identify the CMOS sensor weaknesses. Characterizations in darkness and under illumination demonstrated that dark current increase is the major sensor degradation. Shallow trench isolation was identified to be responsible for this degradation as it increases the number of generation centers in photodiode depletion regions. Consequences on hardness assurance and hardening-by-design are discussed.
|Item Type:||Conference or Workshop Item (Paper)|
|Additional Information:||Proceedings of SPIE - Volume 6816 Sensors, Cameras, and Systems for Industrial/Scientific Applications IX - DOI : 10.1117/12.767484|
|Audience (conference):||International conference proceedings|
|Institution:|| Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE|
Other partners > EADS - Astrium (FRANCE)
French research institutions > Centre National des Etudes Spatiales - CNES
Département d'Electronique, Optronique et Signal - DEOS (Toulouse, France) - Conception d’Imageurs Matriciels Intégrés - CIMI
|Deposited By:||Vincent Goiffon|
|Deposited On:||04 Jun 2008 11:34|
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