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Low Temperature MOCVD-Processed Alumina Coatings

Gleizes, Alain and Sovar, Maria-Magdalena and Samélor, Diane and Vahlas, Constantin Low Temperature MOCVD-Processed Alumina Coatings. (2006) Advances in Science and Technology, vol. 45 . pp. 1184-1193. ISSN 1662-8969

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Official URL: http://dx.doi.org/10.4028/www.scientific.net/AST.45.1184

Abstract

We first present a Review about the preparation of alumina as thin films by the technique of MOCVD at low temperature (550°C and below). Then we present our results about thin films prepared by the low pressure MOCVD technique, using aluminium tri-isopropoxide as a source, and characterized by elemental analysis (EMPA, EDS, ERDA, RBS), FTIR, XRD and TGA. The films were grown in a horizontal, hot-wall reactor, with N2 as a carrier gas either pure or added with water vapour. The deposition temperature was varied in the range 350-550°C. The films are amorphous. Those prepared at 350°C without water added in the gas phase have a formula close to AlOOH. Those deposited above 415°C are made of pure alumina Al2O3. When water is added in the gas phase, the films are pure alumina whatever the deposition temperature.

Item Type:Article
Additional Information:Thanks to Trans Tech Publications editor. The definitive version is available at http://www.scientific.net The original PDF of the article can be found at Advances in Science and Technology website : http://www.scientific.net/AST
Audience (journal):International peer-reviewed journal
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Institution: Université de Toulouse > Institut National Polytechnique de Toulouse - INPT
Université de Toulouse > Université Paul Sabatier-Toulouse III - UPS
French research institutions > Centre National de la Recherche Scientifique - CNRS
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Deposited By: Celine Cabaup
Deposited On:26 Jun 2009 07:36

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