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CuO Nanowires Grown from Cu Film Heated Under a N2/O2 Flow

Zhang, Kaili and Rossi, Carole and Tenailleau, Christophe and Conédéra, Véronique CuO Nanowires Grown from Cu Film Heated Under a N2/O2 Flow. (2009) Journal of Nanoscience and Nanotechnology, vol. 9 (n° 2). pp. 1418-1422. ISSN 1533-4880

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Official URL: http://dx.doi.org/10.1166/jnn.2009.C169

Abstract

Pure, large-area, and aligned CuO nanowires are realized from copper thin film deposited onto silicon substrate by thermal annealing under a N2/O2 gas flow. The as-prepared pure and vertically aligned CuO nanowires along silicon substrate have several advantages over previous approaches such as easier integration into silicon based micro systems, more convenience for subsequent elements deposition, and higher heat of reaction for realization of CuO/Al based nano energetic materials. It is found that long and aligned nanowires can only be formed within a narrow temperature range from 400 to 500 °C. A N2/O2 gas flow rate of 400/100 sccm is moderate for realizing long and aligned CuO nanowires. The synthesized nanowires and thin film beneath the nanowires are confirmed to be pure CuO using X-ray diffraction. The CuO nanowires are found to be bicrystal by high resolution transmission electron microscopy.

Item Type:Article
Additional Information:Thanks to American Scientific Publishers editor. The definitive version is available at http://www.ingentaconnect.com The original PDF of the article can be found at Journal of Nanoscience and Nanotechnology website : http://www.aspbs.com/jnn.html
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution: Université de Toulouse > Institut National Polytechnique de Toulouse - INPT
Université de Toulouse > Université Paul Sabatier-Toulouse III - UPS
Université de Toulouse > Institut National des Sciences Appliquées de Toulouse - INSA
French research institutions > Centre National de la Recherche Scientifique - CNRS
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Deposited By:Celine Cabaup

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