Maury, Francis and Duminica, Florin-Daniel and Gasquères, Cyril Cr-based MOCVD layers as conducting diffusion barriers for copper metallization. (2006) Moroccan Journal of Condensed Matter , vol. 7 (n° 1). pp. 16-21. ISSN 1114-2073
![[img]](http://oatao.univ-toulouse.fr/style/images/fileicons/application_pdf.png) | (Document in English) PDF (Author's version ) - Depositor and staff only - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader 791Kb |
Abstract
Two types of amorphous Cr-based thin films, CrCxNy and CrSixCy, were grown by low pressure MOCVD on Si substrates using respectively Cr(NEt2)4 and Cr[CH2SiMe3]4 as single-source precursor in the low temperature range 400-420 °C and 475-500 °C. Their properties as conducting diffusion barrier against Cu were investigated and the results are discussed. CrSixCy exhibits a better thermal stability and a good Cu wettability but a high resistivity, which is detrimental for this application. CrCxNy has a low resistivity, a satisfactory stability up to 650 °C without undesirable interfacial reactions and an excellent conformality.
| Item Type: | Article |
|---|---|
| Additional Information: | Thanks to Moroccan Statistical Physical Society editor. The definitive version is available at http://www.fsr.ac.ma/MJCM/ The original PDF of the article can be found at Moroccan Journal of Condensed Matter website : www.fsr.ac.ma/MJCM/ |
| Audience (journal): | International peer-reviewed journal |
| Uncontrolled Keywords: | |
| Institution: | Université de Toulouse > Institut National Polytechnique de Toulouse - INPT Université de Toulouse > Université Paul Sabatier-Toulouse III - UPS French research institutions > Centre National de la Recherche Scientifique - CNRS |
| Laboratory name: | |
| Statistics: | download |
| Deposited By: | Celine Cabaup |
Repository Staff Only: item control page
