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Cr-based MOCVD layers as conducting diffusion barriers for copper metallization

Maury, Francis and Duminica, Florin-Daniel and Gasquères, Cyril Cr-based MOCVD layers as conducting diffusion barriers for copper metallization. (2006) Moroccan Journal of Condensed Matter , vol. 7 (n° 1). pp. 16-21. ISSN 1114-2073

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Official URL: http://66.102.1.104/scholar?hl=fr&lr=&q=cache:5mgpPTGUkCsJ:www.fsr.ac.ma/MJCM/vol7-art05.pdf++%22Cr-based+MOCVD+layers+as+conducting+diffusion+barriers+for+copper+metallization%22

Abstract

Two types of amorphous Cr-based thin films, CrCxNy and CrSixCy, were grown by low pressure MOCVD on Si substrates using respectively Cr(NEt2)4 and Cr[CH2SiMe3]4 as single-source precursor in the low temperature range 400-420 °C and 475-500 °C. Their properties as conducting diffusion barrier against Cu were investigated and the results are discussed. CrSixCy exhibits a better thermal stability and a good Cu wettability but a high resistivity, which is detrimental for this application. CrCxNy has a low resistivity, a satisfactory stability up to 650 °C without undesirable interfacial reactions and an excellent conformality.

Item Type:Article
Additional Information:Thanks to Moroccan Statistical Physical Society editor. The definitive version is available at http://www.fsr.ac.ma/MJCM/ The original PDF of the article can be found at Moroccan Journal of Condensed Matter website : www.fsr.ac.ma/MJCM/
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution: Université de Toulouse > Institut National Polytechnique de Toulouse - INPT
Université de Toulouse > Université Paul Sabatier-Toulouse III - UPS
French research institutions > Centre National de la Recherche Scientifique - CNRS
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Deposited By: Celine Cabaup
Deposited On:02 Jul 2009 07:38

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