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Exploration of Pinned Photodiode Radiation Hardening Solutions Through TCAD Simulations

Marcelot, Olivier and Goiffon, Vincent and Magnan, Pierre Exploration of Pinned Photodiode Radiation Hardening Solutions Through TCAD Simulations. (2019) IEEE Transactions on Electron Devices, 66 (8). 3411-3416. ISSN 0018-9383

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Official URL: https://doi.org/10.1109/TED.2019.2922755

Abstract

The use of pinned photodiode (PPD) based CMOS image sensors in harsh radiation environment (such as space) is limited by their tolerance to ionizing radiation. Technology computer aided design (TCAD) simulations are performed to reproduce the radiation induced defect and therefore the dark current increase in pinned photodiode pixels up to 1 kGy (i.e. 100 krad) of total ionizing dose (TID). To do so, the TCAD models are calibrated with measurements performed on irradiated pixels. Then, the influence on the PPD radiation hardness of various manufacturing process and pixel design modifications is explored. This works shows that the proposed modification can improve the radiation hardness of pinned photodiode CMOS image sensors against ionizing.

Item Type:Article
Additional Information:Thanks to the IEEE (Institute of Electrical and Electronics Engineers). This paper is available at : https://ieeexplore.ieee.org/document/8755315 “© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Audience (journal):International peer-reviewed journal
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Institution:Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
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Deposited By: olivier marcelot
Deposited On:22 Jul 2019 13:08

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