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Multi-MGy total ionizing dose induced MOSFET variability effects on radiation hardened CMOS image sensor performances

Rizzolo, Serena and Goiffon, Vincent and Sergent, Marius and Corbière, Franck and Rolando, Sébastien and Chabane, Aziouz and Paillet, Philippe and Marcandella, Claude and Girard, Sylvain and Magnan, Pierre and Van Uffelen, Marco and Mont Casellas, Laura and Scott, Robin and De Cock, Wouter Multi-MGy total ionizing dose induced MOSFET variability effects on radiation hardened CMOS image sensor performances. (2017) In: Radiations Effects on Components and Systems (RADECS), 2 October 2017 - 6 October 2017 (Geneva, Switzerland).

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Abstract

MOSFETs variability in irradiated CIS up to 10 MGy (SiO2) is statistically investigated on about 65000 devices. Different variability sources are identified and the role played by the transistors composing the readout chain is clarified.

Item Type:Conference or Workshop Item (Paper)
HAL Id:hal-02092843
Audience (conference):International conference proceedings
Uncontrolled Keywords:
Institution:French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE)
French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Other partners > Institut d'optique Graduate School - IOGS (FRANCE)
Other partners > Université Jean Monnet - St Etienne (FRANCE)
Other partners > Centre d'Etude de l'Energie Nucléaire - SCK-CEN (BELGIQUE)
Other partners > Fusion for Energy - F4E (SPAIN)
Other partners > Oxford Technologies Ltd. - OTL (UNITED KINGDOM)
Laboratory name:
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Deposited By: Serena Rizzolo
Deposited On:08 Apr 2019 12:53

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