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Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels

Rizzolo, Serena and Goiffon, Vincent and Corbière, Franck and Molina, Romain and Chabane, Aziouz and Girard, Sylvain and Paillet, Philippe and Magnan, Pierre and Boukenter, Aziz and Allanche, Timothé and Muller, Cyprien and Monsanglant-Louvet, Celine and Osmond, Melanie and Desjonquères, Hortense and Macé, Jean Reynald and Burnichon, Pierre and Baudu, Jean-Pierre and Plumeri, Stéphane Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels. (2019) IEEE Transactions on Nuclear Science, 66 (1). 111-119. ISSN 0018-9499

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Official URL: http://doi.org/10.1109/TNS.2018.2884037

Abstract

The impact of the manufacturing process on the radiation-induced degradation effects observed in CMOS image sensors (CISs) at the MGy total ionizing dose (TID) levels is investigated. Moreover, the vulnerability of the partially pinned PHDs at moderate-to-high TIDs is evaluated for the first time to our knowledge (PHD stands for “photodiode”). It is shown that the 3T-standard partially pinned PHD has the lowest dark current before irradiation, but its dark current increases to ~1 pA at 10 kGy(SiO 2 ). Beyond 10 kGy(SiO 2 ), the pixel functionality is lost. The comparison between several CIS technologies points out that the manufacturing process impacts the two main radiation-induced degradations: the threshold voltage shift of the readout chain MOSFETs and the dark current increase. For all the tested technologies, 1.8-V MOSFETs exhibit the lower threshold voltage shift, and the nMOSFETs are the most radiation tolerant. Among all the tested devices, 1.8-V sensors achieve the best dark current performance. Several radiation-hardening-by-design solutions are evaluated at the MGy level to improve further the understanding of CIS radiation hardening at extreme TID.

Item Type:Article
Additional Information:Thanks to the IEEE (Institute of Electrical and Electronics Engineers). This paper is available at : https://ieeexplore.ieee.org/document/8552386 “© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
HAL Id:ujm-01964631
Audience (journal):International peer-reviewed journal
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Institution:Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
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Deposited By: Serena Rizzolo
Deposited On:20 Feb 2019 14:07

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