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VCSEL intrinsic response extraction using T-Matrix formalism

Bacou, Alexandre and Hayat, Ahmad and Rissons, Angélique and Iakovlev, Vladimir and Sirbu, Alexei and Mollier, Jean-Claude and Kapon, Eli VCSEL intrinsic response extraction using T-Matrix formalism. (2009) IEEE Photonics Technology Letters, vol. 2 (n° 14). pp. 957-959. ISSN 1041-1135

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Official URL: http://dx.doi.org/10.1109/LPT.2009.2020805

Abstract

We present a new method to remove the parasitics contribution to the VCSEL chip response, in order to obtain the intrinsic S21 behavior. The on-chip VCSEL is defined as two cascaded two-port subsystems representing the electrical access and the VCSEL optical cavity respectively. S11 and S21 parameters measurements are carried-out using a probe station to characterize the chip response. An electrical equivalent circuit defining the behavior of the electrical access is combined with T-Matrix formalism to remove the parasitics contribution from the measured S21 response. Results allow us to determine the intrinsic 3-dB bandwidth of the VCSEL.

Item Type:Article
Audience (journal):International journal (no peer-reviewed)
Uncontrolled Keywords:
Institution: Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE
Other partners > BeamExpress (SWITZERLAND)
Laboratory name:
Département d'Electronique, Optronique et Signal - DEOS (Toulouse, France) - Micro-ondes et Optique pour Systèmes Embarqués - MOSE
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Deposited By: Angelique Rissons

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