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Radiation Effects in CCD on CMOS Devices: First Analysis of TID and DDD Effects

Marcelot, Olivier and Goiffon, Vincent and Raine, Mélanie and Duhamel, Olivier and Gaillardin, Marc and Molina, Romain and Magnan, Pierre Radiation Effects in CCD on CMOS Devices: First Analysis of TID and DDD Effects. (2015) IEEE Transactions on Electron Devices, 62 (6). 2965-2970. ISSN 0018-9383

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Official URL: http://doi.org/10.1109/TNS.2015.2497405

Abstract

As CMOS image sensors become more and more attractive and with high performances, it becomes possible to use CCD on CMOS devices with reasonable lengths. However, no study has been done on the radiation hardness of such CCD on CMOS devices. Therefore, we propose in this paper a first study of Charge Transfer Inefficiency (CTI) and dark current degradation under TID and DDD irradiations. To do so, test chips have been processed in conventional deep submicron CMOS imaging technologies, and characterized before and after irradiations.

Item Type:Article
Additional Information:Thanks to the IEEE (Institute of Electrical and Electronics Engineers). This paper is available at : https://ieeexplore.ieee.org/document/7348799 “© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
HAL Id:hal-01997957
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
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Deposited By: olivier marcelot
Deposited On:29 Jan 2019 11:19

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