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Plan View and Cross-Section View EBIC Measurements: Effect of e-Beam Injection Conditions on Extracted Minority Carrier Transport Properties

Marcelot, Olivier and Maximenko, Sergey and Magnan, Pierre Plan View and Cross-Section View EBIC Measurements: Effect of e-Beam Injection Conditions on Extracted Minority Carrier Transport Properties. (2014) IEEE Transactions on Electron Devices, 61 (7). 2437-2442. ISSN 0018-9383

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Official URL: http://dx.doi.org/10.1109/TED.2014.2323997

Abstract

Application of low doped epitaxial layers and the increase of complexity of silicon photodiode design require the knowledge of the basic physical parameters such as minority carrier lifetime or diffusion length in order to improve the photodiode performance simulation. In this paper, EBIC technique is used to evaluate minority carrier lifetime and diffusion length on a silicon photodiode. Particular focus is to compare plan view and cross-section view testing geometry, and also to evaluate artefacts introduced by high injection conditions unavoidable in lifetime measurement.

Item Type:Article
Additional Information:Thanks to the IEEE (Institute of Electrical and Electronics Engineers). This paper is available at : https://ieeexplore.ieee.org/document/6834776 “© 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
HAL Id:hal-01996539
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Other partners > United States Navy - USNavy (USA)
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Deposited By: olivier marcelot
Deposited On:28 Jan 2019 13:37

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