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Synthesis of T-Nb2O5 thin-films deposited by Atomic Layer Deposition for miniaturized electrochemical energy storage devices

Ouendi, Saliha and Arico, Cassandra and Blanchard, Florent and Codron, Jean-Louis and Wallart, Xavier and Taberna, Pierre-Louis and Roussel, Pascal and Clavier, Laurent and Simon, Patrice and Lethien, Christophe Synthesis of T-Nb2O5 thin-films deposited by Atomic Layer Deposition for miniaturized electrochemical energy storage devices. (2019) Energy Storage Materials, 16. 581-588. ISSN 2405-8297

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Official URL: https://doi.org/10.1016/j.ensm.2018.08.022

Abstract

Atomic Layer Deposition has been used to grow 30 to 90 nm-thick amorphous Nb2O5 films onto Pt current collectors deposited on Si wafer. While T-Nb2O5 polymorph is obtained by further annealing at 750 °C, the film thickness and the resulting electrode areal capacity are successfully controlled by tuning the number of ALD cycles. The electrochemical analysis reveals a lithium ion intercalation redox mechanism in the T-Nb2O5 electrode. An electrode areal capacity of 8 μAh cm-² could be achieved at 1 C, with only 40% capacity loss at 30 C(2 minutes discharging time). This paper aims at demonstrating the use of Atomic Layer Deposition method in the fabrication of Nb205-based on-chip micro-devices for Internet of Things (IoT) applications.

Item Type:Article
HAL Id:hal-02135683
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE)
Université de Toulouse > Institut National Polytechnique de Toulouse - INPT (FRANCE)
Université de Toulouse > Université Toulouse III - Paul Sabatier - UPS (FRANCE)
Other partners > Réseau de stockage électrochimique de l’énergie - Energie RS2E (FRANCE)
Other partners > Université de Lille (FRANCE)
Laboratory name:
Funders:
ANR - MINOTORES
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Deposited By: cirimat webmestre
Deposited On:05 Feb 2019 13:42

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